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    G11 DIODE Search Results

    G11 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    G11 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


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    91349C IRL530NS/L IRL530NS) IRL530NL) die22 EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS PDF

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    Abstract: No abstract text available
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11


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    91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. PDF

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


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    91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS IRL530NSL PDF

    g11 diode

    Abstract: diode g11 TS4148 RYG TS4148 ts4148ryg
    Text: TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features B —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant


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    TS4148 400mW MIL-STD-750, C/10s Weigh10 g11 diode diode g11 TS4148 RYG ts4148ryg PDF

    TS4148

    Abstract: diode g11 g11 diode
    Text: TS4148 RXG 400mW High Speed SMD Switching Diode Small Signal Diode 1206 A B Features —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant


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    TS4148 400mW MIL-STD-750, C/10s diode g11 g11 diode PDF

    BAT54RLT1

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes BAT54RLT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent


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    BAT54RLT1 236AB) BAT54RLT1 PDF

    BAT54RLT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes BAT54RLT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent


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    BAT54RLT1 236AB) BAT54RLT1 PDF

    TA141

    Abstract: diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
    Text: BU7988KVT LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The


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    BU7988KVT 56bit 12057EAT05 150MHz 112MHz 224MHz) TQFP100V R1120A TA141 diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171 PDF

    TA141

    Abstract: HSYNC, VSYNC, DE TB-141
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The


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    56bit BU7988KVT 12057EAT05 150MHz 112MHz 224MHz) TQFP100V R1120A TA141 HSYNC, VSYNC, DE TB-141 PDF

    BU7988KVT

    Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V 500pcs 08T241A BU7988KVT DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15 PDF

    schottky barrier diode b22

    Abstract: g17g diode td15
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V R1010A schottky barrier diode b22 g17g diode td15 PDF

    DIODE B12 51

    Abstract: diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V DIODE B12 51 diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60 PDF

    diode td15

    Abstract: diode td13 DIODE B12 51 B12 68 diode
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V diode td15 diode td13 DIODE B12 51 B12 68 diode PDF

    CA3049T

    Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
    Text: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent


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    CA3049, CA3102 500MHz 200MHz CA3049T CA3102 500MHz. ca3049 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8 PDF

    CA3102

    Abstract: CA3102E CA3102M CA3102MZ FN611
    Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


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    CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ PDF

    CA3102

    Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
    Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


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    CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M MS-012-AB diode b22 L 321 t PDF

    CA3102

    Abstract: CA3102E CA3102M MS-012-AB
    Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


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    CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB PDF

    Diode Mark ON B14

    Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
    Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. TQFP100V 500pcs Diode Mark ON B14 Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package PDF

    J307

    Abstract: ca3102e CA3102 ca3102 diff amp
    Text: NS E SI G D W T EN R NE D FO PLACEM ter at E D N E n MME r t Ce ED R tsc ECO MMEND l Suppo sil.com/ R T a r O c Data Sheet e i t NO EC hn .in NO R our Tec or www t L c I a cont -INTERS 8 1-88 Dual High Frequency Differential Amplifier For Low Power Applications Up to


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    CA3102 500MHz CA3102 500MHz. J307 ca3102e ca3102 diff amp PDF

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan
    1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1 PDF

    diodes C441

    Abstract: scr welding C380 General electric SCR Calcium Carbonate SCR 100A A430 A570 C350 C390
    Text: HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs G6/G14/G15 G9/G10/3N221/3N222 CELL DATA 180° C O N D U C T IO N , L IQ U ID C O O L E D A T 40°C 1 G PM C E L L NO. M AX. V O L T S P ER C E L L S IN G L E SU R G E AM PS A 390 A 430 A 540 A 570


    OCR Scan
    G6/G14/G15 G9/G10/3N221/3N222 G6/G14/G15 G9/G10/3N221 /3M222 -400Hz diodes C441 scr welding C380 General electric SCR Calcium Carbonate SCR 100A A430 A570 C350 C390 PDF

    BSY55

    Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan
    ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BSY55 m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIOTEC ELECTRONICS CORP 5ÛE ] • 2041107 Q D G G m S 377 H D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310)767-7958 Data Sheet No.: GPDP-301-A —¡—v^ _ \ 3 AMP GENERAL PURPOSE SILICON DIODES FEATURES:


    OCR Scan
    GPDP-301-A DO-27, 60Hlz PDF