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    Untitled

    Abstract: No abstract text available
    Text: G100GN Nch 40V 10A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 14.3mΩ ID ±10A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.


    Original     		PDF RQ3G100GN G100GN

    winbond WPCE773

    Abstract: rt8202a WPCE773 SC4D7U6D3V3KX-gp N10M-GE1 SE100U25VM-L1-GP al232 Function Generator IC 400mhz g547f2 SCD047U16V2KX-1-GP
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CG01.001 PCB P/N : 48.4CG01.0SA REVISION : 08245-SA JV50 Block Diagram 42 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 SMSC Mobile CPU CLK GEN. D SYSTEM DC/DC EMC2102 Penryn ICS9LPRS365B


    Original     		PDF 4CG01 08245-SA ISL62392 ICS9LPRS365B EMC2102 TPS51124 667/800/1066MHz 64MbX16X4 RT9026 winbond WPCE773 rt8202a WPCE773 SC4D7U6D3V3KX-gp N10M-GE1 SE100U25VM-L1-GP al232 Function Generator IC 400mhz g547f2 SCD047U16V2KX-1-GP

    inp hemt power amplifier

    Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
    Text: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface


    Original     		PDF CI0402 WR-10 CI0402 inp hemt power amplifier NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier N218

    WPCE773

    Abstract: WPCE773LA0DG winbond WPCE773 wistron jv50 WISTRON power sequence N10M-GE ICS9LPRS365BKLFT N10M-GE1 rt8202a b30 c250 f 1208
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CG01.001 PCB P/N : 48.4CG01.0SA REVISION : 08245-SA JV50 Block Diagram 42 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 SMSC Mobile CPU CLK GEN. D SYSTEM DC/DC EMC2102 Penryn ICS9LPRS365B


    Original     		PDF 4CG01 08245-SA ISL62392 ICS9LPRS365B EMC2102 TPS51124 667/800/1066MHz 64MbX16X4 RT9026 WPCE773 WPCE773LA0DG winbond WPCE773 wistron jv50 WISTRON power sequence N10M-GE ICS9LPRS365BKLFT N10M-GE1 rt8202a b30 c250 f 1208

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor