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    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


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    SEP8706 SDP8406 SDP8106 SDP8000/8600 SEP8706 G0224T4 PDF