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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 \|im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain	OCR Scan	PDF	F-03110-200 SMF03100-200. SMF-03100-200 G0171Sfl

Catalog Datasheet

MFG & Type

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Document Tags

Untitled

Abstract: No abstract text available
Text: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain

OCR Scan

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F-03110-200 SMF03100-200. SMF-03100-200 G0171Sfl