FX6ASJ2 Search Results

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Rochester Electronics LLC FX6ASJ-2-T13#B00 MOSFET P-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FX6ASJ-2-T13#B00	Bulk	131,707		270	1 - 10 - 100 - 1000 $1.11 10000 $1.11	Buy Now
Renesas Electronics Corporation FX6ASJ-2-T13#B00 - Tape and Reel (Alt: FX6ASJ-2-T13#B00)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FX6ASJ-2-T13#B00	Reel		4 Weeks	326	1 - 10 - 100 - 1000 $1.1136 10000 $1.1136	Buy Now
Rochester Electronics	FX6ASJ-2-T13#B00		131,707		1	1 $1.12 10 $1.12 100 $1.05 1000 $0.952 10000 $0.952	Buy Now

FX6ASJ2 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FX6ASJ-2		Mitsubishi	Pch POWER MOSFET		Original	PDF
FX6ASJ-2		Renesas Technology	MITSUBISHI Pch POWER MOSFET		Original	PDF

FX6ASJ2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PRSS0004ZG-A Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	PDF	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Untitled Abstract: No abstract text available Text: FX6ASJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1438-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : – 100 V rDS ON (max) : 0.58 Ω ID : – 6 A Integrated Fast Recovery Diode (TYP.) : 80 ns Outline RENESAS Package code: PRSS0004ZG-A	Original	PDF	REJ03G1438-0300 PRSS0004ZG-A
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Untitled Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6ASJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6ASJ-2 OUTLINE DRAWING 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
PRSS0004ZA-A Abstract: FX6ASJ2 Text: FX6ASJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1438-0200 Previous: MEJ02G0279-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.58 Ω ID : – 6 A Integrated Fast Recovery Diode (TYP.) : 80 ns	Original	PDF	REJ03G1438-0200 MEJ02G0279-0101) PRSS0004ZA-A PRSS0004ZA-A FX6ASJ2
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	PDF	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
FS10KM12 Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20 Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings	OCR Scan	PDF	O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
FX6ASJ2 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET FX6ASJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX6ASJ-2 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 ± 0 .2 A 0.9 max 0 .5 ± 0 .2 0.8 7 -I I in T © © ' n 9 • 4 V D R IV E . .-1 oov • rDS (ON (MAX) .	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C	OCR Scan	PDF	O-220FN O-220 TQ-220S