2SA1080
Abstract: 2SC2530
Text: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are
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2SA1080
30MHz
10OnA,
lc-10mA
10MHz
300ms
2SA1080
2SC2530
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2SC3056
Abstract: No abstract text available
Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor
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2SC3056,
2SC3056A
2SC3056/2SC3056A
2SC3056
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2SC2522
Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET
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2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
10MHz
300us;
2SC2S22A
2SC2522A,
2SC2522
fujitsu ring emitter 2sc2523
c1507
2SA1073
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2sa 940
Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are
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2SC2530
35MHz
2sa 940
transistor 2SA 374
fujitsu RET transistors
2sa fujitsu
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FT3812
Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h
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2SC2431
2SC2432
FT3812
FT3862
FT3862
2SA1042
2sc2132
c 2432
FUJITSU 2SC2431
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2SA1073
Abstract: 2SA1072 2sc2523
Text: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET
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2SA1072,
2SA1072A,
2SA1073
2SA1072/2SA1072A/2SA1073
2SA1073
2SA1072
2sc2523
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2SC2527
Abstract: fujitsu DC-DC a1077 NPN transistor 2527
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T
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2SC2527
10MHz
2SC2527
fujitsu DC-DC
a1077
NPN transistor 2527
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transistor ITT
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T
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2SC2428
transistor ITT
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TRANSISTOR 2SA1076
Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
Text: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power
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2SA1075
2SA1076
2SA1075/2SA1076
2SC25251
2SC2526,
O-220
TRANSISTOR 2SA1076
TRANSISTOR 2Sa 1075
2SC2526
transistor 2SA
TRANSISTOR 2sc2526
transistor 2SA 374
2sc2525
2SA audio POWER TRANSISTORS
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2SC3058
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran sistor fabricated w ith Fujitsu's unique Ring E m itter Transistor {RET technology.
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2SC3058
2SC3058
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2Sa1045
Abstract: 2SC2435 2sa104
Text: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage
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2SC2435
2SA1045
2SC2435/2SA1045
2SA1045
O-220
2SC2435
2sa104
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FT1551
Abstract: FT2551 fujitsu ring emitter
Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara
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37417fe2
-r-33
FT1551
FT1E51
FT2551,
85MHz
T-33-09
FT2551
fujitsu ring emitter
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2SA1080
Abstract: No abstract text available
Text: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are
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2SA1080
O-Z20
2SA1080
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Untitled
Abstract: No abstract text available
Text: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.
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MB4752A
MB4752A
200ft
AV0009-921J1
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2SC3844
Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Text: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg
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2SC3847
2SC3847
25fis,
2SC3842
2SC3843
2SC3844
2SC3845
2SC3846
2SC3947
2sc3948
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.5J1
Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power
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2SC3056,
2SC3056A
2SC3056/2SC3056A
Q01tiS70
9036-f
.5J1
2SC3056A
1S80
2SC3056
high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz
transistor 9036
Q01t
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fujitsu transistor
Abstract: high power switching transistor npn switching transistor 400v 2SC3057
Text: FUJITSU MICROELECTRONICS BIE D Q 374*^2 DQlfciS7S *ì BIFMI < p January 1990 Edition 1.1 r ' 3 3 ' " FUJITSU PRODUCT PROFILE - 2SC3057 Silicon High Speed Power Transistor ' DESCRIPTION The 2SC3057 is a silicon NPN planar general purpose, high power switching tran
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2SC3057
2SC3057
D01bS7b
T-33-11
fujitsu transistor
high power switching transistor
npn switching transistor 400v
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2SA1042
Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
Text: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching
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T-33-Z3
2SA1041,
2SA1042,
2SC2431,
2SC2432
2SA1042
FUJITSU 2SC2431
2SC2431
2SA1041
2SC243
2SC2432
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2SC3055
Abstract: E3 37497 2sc3055 transistor high power switching transistor
Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*
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2SC3055
2SC3055
laC3055
374CJ7LB
T-33-07
E3 37497
2sc3055 transistor
high power switching transistor
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CI L200
Abstract: 2SC3045
Text: FUJITSU MICROELECTRONICS 3?iH7fc.2 ÜDlbSMä 1 EEBFMI BIE D r - 3 2 January 1990 Edition 1,1 FUJITSU PRODUCT P RO FILE- 2SC3045 Silicon High Speed Power Transistor DESCRIPTION The 2SC3045 is a silicon N PN planar generaf purpose, high power switching tran*
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2SC3045
2SC3045
-Tc-75
T-33-13
CI L200
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2SC2530
Abstract: balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu
Text: FUJITSU MIC ROELEC TRON ICS 31E D E3 374*J7b2 ÜDlbSSb 2 ES FMI January 1990 Edition 1.1 : FUJITSU P R O D U C T P R O F IL E : 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with
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2SC2530
35MHz
T-33-09
2SC2530
balast
fujitsu ring emitter
TRANSISTOR 2SC
fujitsu transistor
transistor 2SC2530
OL14
2sa fujitsu
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L81A
Abstract: 2SC2428
Text: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor
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lb51b
r-33-13
2SC2428
30Cjis
T-33-13
L81A
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ltsj
Abstract: 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF
Text: FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EI F M I -r- 2 2 - 1 3 FUJITSU fS if° : PR O D UC T P R O F I L E — . * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN general purpose, high pow er
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37417b2
2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
2SC2522/2SC25
/2SC2523
ltsj
2SC2623
2SC25
2SC2522
2SC2522A
fujitsu ring emitter 2sc2523
15CF
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transistor DA 3309
Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
Text: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated
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374T7L5
2SC2528
2SC2528
2SA1078,
transistor DA 3309
lc07a
2SA1078
bv 3309
AC 128 pnp transistor
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