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    FUJITSU RING EMITTER Search Results

    FUJITSU RING EMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC1235F Rochester Electronics LLC MC1235 - Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
    100324FM/B Rochester Electronics 100324 - TTL to ECL Translator, 6 Func, Inverted Output, ECL Visit Rochester Electronics Buy
    MC1218L Rochester Electronics LLC MC1218 - ECL to TTL Translator, ECL, CDIP14 Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    MC1230F Rochester Electronics LLC XOR Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy

    FUJITSU RING EMITTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1080

    Abstract: 2SC2530
    Text: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are


    OCR Scan     		PDF 2SA1080 30MHz 10OnA, lc-10mA 10MHz 300ms 2SA1080 2SC2530

    2SC3056

    Abstract: No abstract text available
    Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor


    OCR Scan     		PDF 2SC3056, 2SC3056A 2SC3056/2SC3056A 2SC3056

    2SC2522

    Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET


    OCR Scan     		PDF 2SC2522, 2C2522A, 2C2523 2SC2522/2SC2522A/2SC2523 10MHz 300us; 2SC2S22A 2SC2522A, 2SC2522 fujitsu ring emitter 2sc2523 c1507 2SA1073

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    FT3812

    Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
    Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h ­


    OCR Scan     		PDF 2SC2431 2SC2432 FT3812 FT3862 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431

    2SA1073

    Abstract: 2SA1072 2sc2523
    Text: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET


    OCR Scan     		PDF 2SA1072, 2SA1072A, 2SA1073 2SA1072/2SA1072A/2SA1073 2SA1073 2SA1072 2sc2523

    2SC2527

    Abstract: fujitsu DC-DC a1077 NPN transistor 2527
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T


    OCR Scan     		PDF 2SC2527 10MHz 2SC2527 fujitsu DC-DC a1077 NPN transistor 2527

    transistor ITT

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T


    OCR Scan     		PDF 2SC2428 transistor ITT

    TRANSISTOR 2SA1076

    Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
    Text: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power


    OCR Scan     		PDF 2SA1075 2SA1076 2SA1075/2SA1076 2SC25251 2SC2526, O-220 TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS

    2SC3058

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran ­ sistor fabricated w ith Fujitsu's unique Ring E m itter Transistor {RET technology.


    OCR Scan     		PDF 2SC3058 2SC3058

    2Sa1045

    Abstract: 2SC2435 2sa104
    Text: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SC2435 2SA1045 2SC2435/2SA1045 2SA1045 O-220 2SC2435 2sa104

    FT1551

    Abstract: FT2551 fujitsu ring emitter
    Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara


    OCR Scan     		PDF 37417fe2 -r-33 FT1551 FT1E51 FT2551, 85MHz T-33-09 FT2551 fujitsu ring emitter

    2SA1080

    Abstract: No abstract text available
    Text: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are


    OCR Scan     		PDF 2SA1080 O-Z20 2SA1080

    Untitled

    Abstract: No abstract text available
    Text: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.


    OCR Scan     		PDF MB4752A MB4752A 200ft AV0009-921J1

    2SC3844

    Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
    Text: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg


    OCR Scan     		PDF 2SC3847 2SC3847 25fis, 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2sc3948

    .5J1

    Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
    Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power


    OCR Scan     		PDF 2SC3056, 2SC3056A 2SC3056/2SC3056A Q01tiS70 9036-f .5J1 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t

    fujitsu transistor

    Abstract: high power switching transistor npn switching transistor 400v 2SC3057
    Text: FUJITSU MICROELECTRONICS BIE D Q 374*^2 DQlfciS7S *ì BIFMI < p January 1990 Edition 1.1 r ' 3 3 ' " FUJITSU PRODUCT PROFILE - 2SC3057 Silicon High Speed Power Transistor ' DESCRIPTION The 2SC3057 is a silicon NPN planar general purpose, high power switching tran­


    OCR Scan     		PDF 2SC3057 2SC3057 D01bS7b T-33-11 fujitsu transistor high power switching transistor npn switching transistor 400v

    2SA1042

    Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
    Text: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching


    OCR Scan     		PDF T-33-Z3 2SA1041, 2SA1042, 2SC2431, 2SC2432 2SA1042 FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432

    2SC3055

    Abstract: E3 37497 2sc3055 transistor high power switching transistor
    Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*


    OCR Scan     		PDF 2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor

    CI L200

    Abstract: 2SC3045
    Text: FUJITSU MICROELECTRONICS 3?iH7fc.2 ÜDlbSMä 1 EEBFMI BIE D r - 3 2 January 1990 Edition 1,1 FUJITSU PRODUCT P RO FILE- 2SC3045 Silicon High Speed Power Transistor DESCRIPTION The 2SC3045 is a silicon N PN planar generaf purpose, high power switching tran*


    OCR Scan     		PDF 2SC3045 2SC3045 -Tc-75 T-33-13 CI L200

    2SC2530

    Abstract: balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu
    Text: FUJITSU MIC ROELEC TRON ICS 31E D E3 374*J7b2 ÜDlbSSb 2 ES FMI January 1990 Edition 1.1 : FUJITSU P R O D U C T P R O F IL E : 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with


    OCR Scan     		PDF 2SC2530 35MHz T-33-09 2SC2530 balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu

    L81A

    Abstract: 2SC2428
    Text: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor


    OCR Scan     		PDF lb51b r-33-13 2SC2428 30Cjis T-33-13 L81A

    ltsj

    Abstract: 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF
    Text: FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EI F M I -r- 2 2 - 1 3 FUJITSU fS if° : PR O D UC T P R O F I L E — . * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN general purpose, high pow er


    OCR Scan     		PDF 37417b2 2SC2522, 2C2522A, 2C2523 2SC2522/2SC2522A/2SC2523 2SC2522/2SC25 /2SC2523 ltsj 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF

    transistor DA 3309

    Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
    Text: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated


    OCR Scan     		PDF 374T7L5 2SC2528 2SC2528 2SA1078, transistor DA 3309 lc07a 2SA1078 bv 3309 AC 128 pnp transistor