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    2SC3847 Search Results

    2SC3847 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3847 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SC3847 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3847 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3847 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3847 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC3847 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC3847 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2SC3847 Freq15M time500n

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC3844

    Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
    Text: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg


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    PDF 2SC3847 2SC3847 25fis, 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2sc3948

    2SC3819

    Abstract: 2SC3852A 2SC3818 PA2012 2SA1488 251C 2SC3815 2SC3817 2SC3820 2SC3821
    Text: - 174 - Ta=25^C, *EPÍáTc=25eC m 2SC3815 % ít S B m m & 900MHz PA Vc b o Vc e o (V) (V) m Ic(DC) Pc Pc* (A) (W) (W) 20 12 1.5 I c bo (max) (/¿A) 17.5 V’cB % (min) M tÉ (max) (V) 250 15 (Ta=25cO ) [*En(itypfiI] hF E 20 200 VCE (V) Ic/lE (A) (V) 7 0.2


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    PDF 2SC3815 900MHz 2SC3817 2SC3818 2SC3819 2SC3820 2SC3821 2SC3822 200MHz SC-59A) 2SC3852A PA2012 2SA1488 251C 2SC3820 2SC3821

    2SC3843

    Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
    Text: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S


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    PDF 2SC3845 2SC3845 2SC3842 2SC3843 2SC3844 2SC3846 2SC3847 2SC3947 2SC3948

    2SC3844

    Abstract: 2SC3842 2SC3843 2SC3845 2SC3846 2SC3847 2SC3947 2SC3948
    Text: FU JI TSU MICROELECTRONICS 31E D 37MT7b2 ÜQlbbilb 1 IF M I T Ja n u a ry 1990 Edition 1.1 — . FUJITSU P R O D U C T P R O F ILE - — - 2 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A B S O L U T E MAXIMUM R A TIN G S Parameter


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    PDF 37MT7b2 2SC3948 2SC3948 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947

    2SC3847

    Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
    Text: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l


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    PDF D01fc 2SC3947 2SC3947 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847

    2SC3845

    Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
    Text: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150


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    PDF 374T7b2 01tb52 2SC3843 2SC3843 2SC3842 2SC3844 2SC3845 2SC3846 2SC3847 6011s fujitsu tg h

    2SC3843

    Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
    Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter


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    PDF 374T7b2 2SC3846 2SC3846 2SC3842 2SC3843 2SC3844 2SC3845 2SC3847 2SC3947 5011s 2SC3948 2SC3949

    2SC3842

    Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
    Text: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature


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    PDF 374R7b5 2SC3844 2SC3844 2SC3842 2SC3843 2SC3845 2SC3846 2SC3847 2SC3947

    2SC3842

    Abstract: 2SC3847 2SC3948 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2SC3949
    Text: FU JI TSU M I C R O E L E C T R O N I C S 31E D C2 3 7 4 ci?t,B O O l b b S O 3 E I F M I r - 3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2S C 3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS Parameter Sym bol


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    PDF 374m2 T-33-i3 2SC3949 2SC3949 25/us, 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3948 2SC3947