schematic diagram inverter air conditioner
Abstract: schematic diagram inverter lcd monitor fujitsu washing machine bosch circuit diagram induction cooker schematic diagram schematic diagram induction cooker bosch washing machine motor schematic mb90802 Notebook lcd inverter schematic bosch Mass Air Flow Sensor Bosch Washing machine CPU
Text: MICROCONTROLLER FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact:
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MB89P147
MB89146
MB89P945
MB89923
32/16/8-bit
MB89PV140
schematic diagram inverter air conditioner
schematic diagram inverter lcd monitor fujitsu
washing machine bosch circuit diagram
induction cooker schematic diagram
schematic diagram induction cooker
bosch washing machine motor schematic
mb90802
Notebook lcd inverter schematic
bosch Mass Air Flow Sensor
Bosch Washing machine CPU
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FMC2223LN-03
Abstract: fujitsu k-band
Text: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2223LN-03
12dBm
FMC2223LN-03
fujitsu k-band
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FMC2122LN-03
Abstract: k-band amplifier
Text: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2122LN-03
12dBm
FMC2122LN-03
k-band amplifier
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FMC1718C6-02
Abstract: No abstract text available
Text: FMC1718C6-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718C6-02
18dBm
FMC1718C6-02
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FMC1819P1-01
Abstract: No abstract text available
Text: FMC1819P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819P1-01
21dBm
FMC1819P1-01
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555 databook
Abstract: FMC1718LN-02 "ku band" amplifier
Text: FMC1718LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718LN-02
12dBm
FMC1718LN-02
555 databook
"ku band" amplifier
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FMC1819LN-02
Abstract: Fujitsu Ku microwave
Text: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819LN-02
12dBm
FMC1819LN-02
Fujitsu Ku microwave
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FMC1718P1-01
Abstract: Fujitsu Ku microwave aeg 558
Text: FMC1718P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718P1-01
21dBm
FMC1718P1-01
Fujitsu Ku microwave
aeg 558
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FMC2223C6-03
Abstract: No abstract text available
Text: FMC2223C6-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 13dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2223C6-03
18dBm
FMC2223C6-03
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FMC2122P1-02
Abstract: No abstract text available
Text: FMC2122P1-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2122P1-02
21dBm
FMC2122P1-02
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FMC1819LN-02
Abstract: FMC1819LN02
Text: FMC1819LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q
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FMC1819LN-02
12dBm
FMC1819LN-02
-15dBm
FMC1819LN02
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Untitled
Abstract: No abstract text available
Text: FMCI 718LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q
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718LN-02
12dBm
FMC1718LN-02
-15dBm
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FMC1819C6-02
Abstract: No abstract text available
Text: FMC1819C6-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819C6-02
18dBm
FMC1819C6-02
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Untitled
Abstract: No abstract text available
Text: FMCI 718P1 -01 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-|<jB = 21dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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718P1
21dBm
FMC1718P1-01
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Untitled
Abstract: No abstract text available
Text: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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02MH-14
FLK102MH-14
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Untitled
Abstract: No abstract text available
Text: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general
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FLK202MH-14
FLK202M
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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FMC2223P1-02
Abstract: Fujitsu Ku microwave
Text: FMC2223P1-02 , Ku k-Büiici Power GciAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Parameter Symbol Rating Unit DC Input Voltage vdd 10 V DC Input Voltage vgg -7 V Input Power Pin 13 dBm Storage Temperature T stg -55 t o +125 °C Operating Case Temperature
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FMC2223P1-02
10dBm
FMC2223P1-02
Fujitsu Ku microwave
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Untitled
Abstract: No abstract text available
Text: F M C IH 1901 -01 Ku, K-Baiid Power GaAs Modules ABSOLUTE MAXIMUM RATINGS A m bient Tem perature Ta = 25 C Parameter Symbol Rafting Unit DC Input Voltage Vd D 10 V DC Input Voltage VGG -7 V Input Power Pin 24 dBm Storage Temperature Tstg -55 to +125 °C
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10dBm
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Untitled
Abstract: No abstract text available
Text: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC141501-01
UJ11jU
31dBm
FMC141501-01
12dBm
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Untitled
Abstract: No abstract text available
Text: F| .ÇjU-, FMC2122LN-03 J Ku, K-Band Power GaAs M odules FEATURES • • • • • • • High Output Power: P-i ^ b = 12dBm Typ. High Gain: G-ih r = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50Q
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FMC2122LN-03
12dBm
FMC2122LN-03
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Untitled
Abstract: No abstract text available
Text: FMC2223LN-03 r UJ11bU Ku, K-Band Power GaAs Modules FEATURES • High Output Power: P-|<jB = 12dBm Typ. • High Gain: G-ih r = 12dB(Typ.) • Low In/Out VSWR • Low Noise: NF = 3.0dB (Typ.) • Broad Band: 22.4 ~ 23.6GHz • Impedance Matched Zin/Zout = 50Q
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FMC2223LN-03
UJ11bU
12dBm
FMC2223LN-03
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Untitled
Abstract: No abstract text available
Text: F|.fjU-, FMC2223C6-03 Ku, K-Band Power GaAs Modules rUJI 1jU FEATURES • • • • • • High Output Power: P-|<jB = 18dBm Typ. High Gain: G-ih r = 13dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2223C6-03
18dBm
FMC2223C6-03
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Untitled
Abstract: No abstract text available
Text: F| .ÇjU-, FMC1718C6-02 Ku, K-Band Power GaAs Modules J FEATURES • • • • • • High Output Power: P-|<jB = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718C6-02
18dBm
FMC1718C6-02
718C6-02
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