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    FUJITSU DATA COMPRESSION UNIT Search Results

    FUJITSU DATA COMPRESSION UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU DATA COMPRESSION UNIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cvbs to usb converter ic

    Abstract: vga to usb converter ic nagravision conax compression mpeg 1 layer 2 ofdm adsl
    Text: BUSINESS UNIT MULTIMEDIA MPEG2 decoder with 20 Mbit embedded SDRAM RAMPEG MB87P2030 High Performance System / Low System Cost < Very high Level of Integration < embedded SDRAM - 20 Mbit < two ARCs @ 108MHz < High Performance Display Controller < two Color Encoder


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    PDF MB87P2030 108MHz Dec2000 MB87P2030 cvbs to usb converter ic vga to usb converter ic nagravision conax compression mpeg 1 layer 2 ofdm adsl

    FUJITSU XBAND

    Abstract: No abstract text available
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is


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    PDF FLX257XV FLX257XV FCSI0598M200 FUJITSU XBAND

    fujitsu gaas fet

    Abstract: FLX257XV
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain Drain Drain Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is


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    PDF FLX257XV FLX257XV FCSI0598M200 fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Brocade 6520 Fibre Channel switch Datasheet Brocade 6520 Fibre Channel switch Scalable Enterprise-Class SAN Switch for Highly Virtualized, Cloud Environments To meet dynamic and growing business demands, data centers are evolving into highly virtualized environments and cloudbased architectures. This approach enables


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    block diagram of Fingerprint based security system

    Abstract: MB86H50 bios phoenix TRUSTEDCORE HDMI receiver IC with H.264 encoder output MB86297 Fujitsu MBF320 MBF310 MB91F467B Fujitsu MBF310 MBF320
    Text: S p r i n g 2 0 0 7 The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. MB91F465XA with Embedded FlexRay Interface Ready to Go The FlexRay protocol is moving into a full array of automotive applications, and Fujitsu has emerged as a leader


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    PDF MB91F465XA MB91F267N 32-bit MotorKit-91F267-MC MS333, MB86297 CORP-21238-3/2007 block diagram of Fingerprint based security system MB86H50 bios phoenix TRUSTEDCORE HDMI receiver IC with H.264 encoder output Fujitsu MBF320 MBF310 MB91F467B Fujitsu MBF310 MBF320

    A 7800

    Abstract: No abstract text available
    Text: DATASHEET BROCADE 7800 EXTENSION SWITCH DATASHEET BROCADE 7800 EXTENSION SWITCH DATA CENTER THE BROCADE 7800 EXTENSION SWITCH IS AN IDEAL PLATFORM FOR BUILDING OR EXPANDING A HIGH-PERFORMANCE SAN EXTENSION INFRASTRUCTURE FOR DISASTER RECOVERY, DATA PROTECTION, AND DATA MOBILITY STORAGE SOLUTIONS


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    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Fujitsu ETERNUS CS High End V5.1 on S11 Data Protection Appliance Data Sheet Fujitsu ETERNUS CS High End V5.1 Data Protection Appliance Radically simplifying data protection ETERNUS CS Data Protection Appliances The Fujitsu ETERNUS CS storage solutions,


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    PDF CS800

    MB86h51

    Abstract: Milbeaut MB86H52 MB86H ODOMETER ARM1176JZ MB8AA3020 ARM926J-E ARM1176JZF MB87Q3070
    Text: 2007 Executive Briefing Fujitsu Microelectronics America, Inc. Program Introduction Emi Igarashi Corporate Overview Kazuyuki Kawauchi Business Update Keith Horn Summary / Q&A Keith Horn 11/06/07, Executive Briefing 2 Fujitsu Microelectronics America, Inc. 2007


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    PDF 65nm/45nm) IDB-1394 MB86H51 MB86H52 MB39C308 Milbeaut MB86H ODOMETER ARM1176JZ MB8AA3020 ARM926J-E ARM1176JZF MB87Q3070

    Transistor 2TY

    Abstract: Cell phone controlled robot F6484 Sun Ultra 30 "Tape drive" "magnetic tape"
    Text: Connects to Fujitsu GlobalServer Support Software Related Products Supported OS 128-track 36-track LIBSP V20L10 library control program MTCP V10L10 (magnetic tape utility) OSIV/MSP OSIV/XSP ・LIBSP V20L10 ・MTCP V10L10 Library Section Specifications


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    PDF 128-track 36-track V20L10 V10L10 V20L10 F6484 F6476 BL0046-2TY Transistor 2TY Cell phone controlled robot Sun Ultra 30 "Tape drive" "magnetic tape"

    Untitled

    Abstract: No abstract text available
    Text: F SUO] LG L-Band Medium & High Power di GaAs F E is Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12.0 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 375 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C


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    PDF 2000Q.

    FLC081xp

    Abstract: FLC081
    Text: FLC081XP GaA s F E T and H E M Ï Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >DSS Test Conditions VDS = 5V, Vos = 0V Min. - Limit Typ. Max. 300 450 Unit mA Transconductance 9m Vqs = 5V, IQS = 200mA


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    PDF FLC081XP 200mA 10pcs. FLC081xp FLC081

    FSX52X

    Abstract: fsx52 SS 1228
    Text: FSX52X GaAs F ET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current Condition Min. Limit Typ. Max. 150 220 Unit mA VDS =3V, Vqs =0V Vds = 3V, IDS =60mA 100 Transconductance IDSS gm 30 50 - mS Pinch-off Voltage


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    PDF FSX52X -10hA 13dBm FSX52X fsx52 SS 1228

    0910-4C

    Abstract: 09104
    Text: FLM 0910-4C Internally Matched Power CìaAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 25 w -65 t o +175 °c 175 °c Total Power Dissipation pt


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    PDF 0910-4C Brea142 27dBm 25dBm 23dBm 0910-4C 09104

    31-oq

    Abstract: 31oQ
    Text: F LAI 0910-2 Internally Matched Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 17.5 w °c °c Total Power Dissipation pt Tc = 25°C Storage Temperature


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    PDF 28dBm 22dBm 20dBm 18dBm 31-oq 31oQ

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA Internally Matched Power jaAs I E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C f# 1ft item Symbol Concfttlon Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 93.7 w Total Power Dissipation Tc = 25°C Pt Storage Temperature


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    PDF FLM5964-25DA

    Untitled

    Abstract: No abstract text available
    Text: F M C 141401 -02 , Kn k-Bcuid Power GaAs Modules ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Rating Unit DC Input Voltage vdd 12 V DC Input Voltage vgg -7 V Pin 20 dBm Storage Temperature T stg -55 t o +125 °C Operating Case Temperature


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    cd 1691 cp

    Abstract: FSX52WF FSX52W FSX52 FUJITSU MICROWAVE
    Text: FSX52W F General Purpose GciAs F E T s A B SO LU T E M AXIM UM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 1.5 w Storage Temperature Tstg -65 tc +175


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    PDF FSX52W cd 1691 cp FSX52WF FSX52 FUJITSU MICROWAVE

    Untitled

    Abstract: No abstract text available
    Text: FMC2122LN-03 , Kn k-tíand Power GciAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Parameter Symbol Rating Unit DC Input Voltage Vd D 10 V DC Input Voltage vgg -7 V Input Power Pin 3 dBm Storage Temperature Tstg -55 t o +125 °C -55 to +85


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    PDF FMC2122LN-03 -15dBm

    Untitled

    Abstract: No abstract text available
    Text: 7^73-*V3 F U J I TS U M I C R O E L E C T R O N I C S 47E D 37M=i7b2 001 0 42 1 T B F N I FUJITSU July 1991 DATA SHEET MB3121 Compandor IC The Fujitsu MB3121 is a highly functional compandor 1C with on-chip support circuitry that includes a microphone amplifier, input amplifier, and a splatter filter


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    PDF MB3121 MB3121 28-Lead FPT-28P-M01

    FMC2223P1-02

    Abstract: Fujitsu Ku microwave
    Text: FMC2223P1-02 , Ku k-Büiici Power GciAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Parameter Symbol Rating Unit DC Input Voltage vdd 10 V DC Input Voltage vgg -7 V Input Power Pin 13 dBm Storage Temperature T stg -55 t o +125 °C Operating Case Temperature


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    PDF FMC2223P1-02 10dBm FMC2223P1-02 Fujitsu Ku microwave

    Untitled

    Abstract: No abstract text available
    Text: F M C IH 1901 -01 Ku, K-Baiid Power GaAs Modules ABSOLUTE MAXIMUM RATINGS A m bient Tem perature Ta = 25 C Parameter Symbol Rafting Unit DC Input Voltage Vd D 10 V DC Input Voltage VGG -7 V Input Power Pin 24 dBm Storage Temperature Tstg -55 to +125 °C


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    PDF 10dBm

    Untitled

    Abstract: No abstract text available
    Text: F MC 171801 -01 k n , K-Band Power GaAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Rating Unit PC input Voltage vdd 10 V DC Input Voltage vgg -7 V Input Power Pin 23 dBm Storage Temperature T stg -55 t o +125 °C Operating Case Temperature


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    Untitled

    Abstract: No abstract text available
    Text: F M C 1718C6-02 Kn, K - B a n d Power CiaAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Unit vdd 10 V DC Input VoNage vgg -7 V Input Power Pin 7 dBm S l^ e T e ^ iM « Tstg -55 t o +125 °C Operating Case Tempwature 1- -55 to +85 °C Q.


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    PDF 1718C6-02 Max17 -15dBm

    Untitled

    Abstract: No abstract text available
    Text: F M C 2 122P5-01 , K n K -B an d Power GaAs Modules ABSOLUTE MAXIMUM RATINGS A m bient Tem perature Ta = 25 C ' tfift fMtflftll Psrflnw tw 1 Rating Unit DC Input Voltage VDD 10 V DC input Voltage VGG -7 V P in 22 dBm Tstg -55 t o +125 °C o -55 to +85 °C


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    PDF 122P5-01 19dBm 16dBm 13dBm