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    FLX257XV Search Results

    FLX257XV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLX257XV Eudyna Devices FET Misc, GaAs FET & HEMT Chips Original PDF
    FLX257XV Fujitsu GaAs FET & HEMT Chip Original PDF

    FLX257XV Datasheets Context Search

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    FUJITSU XBAND

    Abstract: No abstract text available
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is


    Original     		PDF FLX257XV FLX257XV FCSI0598M200 FUJITSU XBAND

    GaAs FET HEMT Chips

    Abstract: FLX257XV
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is


    Original     		PDF FLX257XV FLX257XV Symb4888 GaAs FET HEMT Chips

    GaAs FET chip

    Abstract: FLX257XV Eudyna Devices
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is


    Original     		PDF FLX257XV FLX257XV Symb4888 GaAs FET chip Eudyna Devices

    fujitsu gaas fet

    Abstract: FLX257XV
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain Drain Drain Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is


    Original     		PDF FLX257XV FLX257XV FCSI0598M200 fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is


    OCR Scan     		PDF FLX257XV FLX257XV FCSI0598M200