Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
|
Original
|
50A/1200V-6in1
6MBI450U-120
MT5F12331
May-10-
H04-004-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka
|
Original
|
2MBI450UE-120
MT5F12399
200V/450A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI200UC-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit July 9 ‘02 July 9 ‘02 REVISIONS T.Satou S.Miyashita T.Miyasaka
|
Original
|
2MBI200UC-120
MT5F12446
200V/200A
/-15V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )
|
Original
|
1MBI600UB-120
H04-004-07
1MBI600UB-120
H04-004-03
|
PDF
|
HEP230
Abstract: 2MBI600UE-060 7MBR50UA060 6mbi60 7MBR75UB060 2MBI300UB-060 7MBR30UA060 2MBI400UB-060 fuji transistor modules fuji bipolar transistor
Text: T-series and U-series IGBT Modules 600 V Seiji Momota Syuuji Miyashita Hiroki Wakimoto 110 2. T-series IGBT Modules 2.1 Features and challenges of T-series IGBT modules The cell structure of an NPT-type IGBT and the unit cell of PT (punch-through)-type device are shown
|
Original
|
|
PDF
|
IGBT cross reference semikron eupec
Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
|
Original
|
DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
IGBT cross reference semikron
2MBI 200NB-120 IGBT
Eupec
150Ne120
MG200J2YS50 mitsubishi
MG100Q2YS51
MG400Q1US41 igbt mitsubishi
FZ800R16KF4
MG200Q2YS40
|
PDF
|
IGBT cross reference semikron eupec
Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
|
Original
|
DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
150Ne120
FZ800R16KF4
MG200J2YS50 mitsubishi
IGBT cross reference semikron
Eupec Power Semiconductors
IGBT mitsubishi mg300j2ys50
MBM200GS12
FZ1600R12KF4
MG200Q2YS40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
|
Original
|
00A/1200V-2in1
MT5F16506
2MBI800U4G-120
14-Jul-05
H04-004-007
H04-004-003
|
PDF
|
2MBI1200U4G-120
Abstract: ED-4701 MT5F12959
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
|
Original
|
14-Jul-05
200A/1200V-2in1
2MBI1200U4G-120
MT5F16507
H04-004-007
H04-004-003
2MBI1200U4G-120
ED-4701
MT5F12959
|
PDF
|
MT5F12959
Abstract: MT5F ic60
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
|
Original
|
00A/1200V-2in1
MT5F16505
2MBI600U4G-120
14-Jul-05
H04-004-007
H04-004-003
MT5F12959
MT5F
ic60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
|
Original
|
50A/1700V-6in1
6MBI450U-170
MT5F12546
H04-004-003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
|
Original
|
00A/1700V-6in1
6MBI300U-170
MT5F12711
H04-004-003
|
PDF
|
fuji igbt
Abstract: 4MBI150T-060 AE 04 equivalent
Text: a Changed the equivalent circuit Oct-24-’02 S.O, T,M 3 4 DATE REVISIONS MA4LE 18 5 6 NAME DRAWN Sep.-26-’02 S.Ogawa CHECKED Sep.-26-’02 S.Miyashita T.Miyasaka DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
|
Original
|
Oct-24-
4MBI150T-060
fuji igbt
4MBI150T-060
AE 04 equivalent
|
PDF
|
2MBI75UA-120
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied
|
OCR Scan
|
2MBI75UA-120
MT5F12226
200V/75A
MT5F12226
2MBI75UA-120
|
PDF
|
|
|
WT6M
Abstract: 25CC
Text: S P E C 1 F 1 C A T 1 ON TENTATIVE -2 JZ c E ï* 5 — » Product Name :* Type Name : Spec. No. : IGBT Module (Power Integrated Module) I M B R I 0 P E 1 2 0 MT6M1918 O " Eç t ï - £ S? »_ o ~ C V î? J7 25 le! * i*i§ * -SU 5 g ô u n i çï?r *,•
|
OCR Scan
|
TMBR10PE120
WT6M1918
MT6M1918
WT6M
25CC
|
PDF
|
7MBR25PE120
Abstract: No abstract text available
Text: S P E C I F I C A T I ON TENTATIVE Product Name : 1GBT Module (Power Integrated Module) 7 M B R 2 Type Name li n M T6 M I8 1 7 Spec. No. - 5=1 his! -j ï I - 5 P E 1 20 11 ! f| H | 5 i -I P I ! E 3 o |-*|ï 'Itj? |3l1f i2 SE i-5 l- sa ¿ u n Fuji Electric Co.,Ltd. (Matsumoto Factory)
|
OCR Scan
|
7MBR25PE120
MT6M1817
7MBR25PE120
|
PDF
|
TH50
Abstract: fuji igbt tentative
Text: S P E C I F I C A T I ON TENTATIVE Product Name : T M B R 1 5 P E l l l Type Name This m a le iia l nod (he inform ation heicn is llu; p io p c i ty of Fu|i £ Ite Inc Co.Lid They shüll ht* neither lepiuduted co p im i lent 01 disclosed in any way w h a ts o e v e i loi the usi; ol a n y
|
OCR Scan
|
TMBR15PE120
MT6M1816
TH50
fuji igbt tentative
|
PDF
|
6MBR10PD120
Abstract: No abstract text available
Text: S P E C I F I C A T I ON TENTATIVE This m d lenii! and the mio»m.iiion hei fin is the proper ly of Fu|i Electric Co I id They shall be neither reproduced, copied leni or disclosed in any way whatsoever for the use of any thud i*ii* ly nor used for the manufac tin my pu»poses without
|
OCR Scan
|
6MBR10PD120
MT6M1815
MT6M1815
6MBR10PD120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fuji H itachi Pow er S em iconductor Co.,Ltd IG B T D evelopm ent Dept. Section M12 <TENTATIVE> This material and the information herein is the property of Fuji Electnc Co .Ltd They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any
|
OCR Scan
|
T5F12DRAWN
MT5F12223
|
PDF
|
2MBI150UA-120
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IG B T Developm ent Dept. Section M12 <TENTATIVE> 2 M B I1 5 0 U A -1 2 0 Target specification This material and ihe Information herein is the property of Fuji Electnc Co .ltd They shall be neither reproduced, copied,
|
OCR Scan
|
2MBI150UA-120
MT5F12221
200V/150A
2MBI150UA-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co.,Ltd IG BT Development Dept. Section M12 <TENTATIVE> U -series 2 M B I3 0 0 U C -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) 28 ;o 2 21 ¡o 2 Mounting hole This material and the Information herein is the properly of
|
OCR Scan
|
5F12222
|
PDF
|
diode T325
Abstract: 2MBI150J-060 JZ 1-1A fuji IGBT
Text: i Ratings and characteristics of Fuji M B I 1 5 0 J T — IG B T 6 MBT Module (TENTATIVE) 1. Ou 11 ine Drawing Unit : mm * Isolation Voltage : AC 2500 V 1 ninute °í I : llí: U s - ìé t 2* â ë lili uni -iülï i n s 1|! jjjsl M UJ -O ÉÉJI Tab type terminals
|
OCR Scan
|
|
PDF
|
2MBI200UB-120
Abstract: No abstract text available
Text: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS
|
OCR Scan
|
2MBI200UB-120
MT5F12209
2MBI200UB-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED
|
OCR Scan
|
MT5F4995
MT5F4905
EE3A71B
000E7E1
|
PDF
|
