FTS1004 Search Results

FTS1004 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FTS1004		Sanyo Semiconductor	DC-DC converter		Original	PDF

FTS1004 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FTS1004 Abstract: No abstract text available Text: Ordering number:EN5992 P-Channel Silicon MOSFET FTS1004 DC-DC Converter Applications Features Package Dimensions • Low ON Resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147 [FTS1004] 3.0 0.975 0.65 5 1 6.4 0.95 4.5 0.5 0.95 8 4 0.125 0.1 1.0	Original	PDF	EN5992 FTS1004 FTS1004] FTS1004
MM2147 Abstract: FTS1004 Text: Ordering number:EN5992 P-Channel Silicon MOSFET FTS1004 DC-DC Converter Applications Features Package Dimensions • Low ON Resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147 [FTS1004] 3.0 0.975 0.65 5 1 6.4 0.95 4.5 0.5 0.95 8 4 0.125 0.1 1.0	Original	PDF	EN5992 FTS1004 FTS1004] MM2147 FTS1004
2sk3436 Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis	Original	PDF	TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
2sk3436 Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品保守品・廃止品に関するお知らせいつも半導体製品をご使用いただきまして誠にありがとうございます。このたび、下記三洋半導体製品を保守品または廃止品と致します。	Original	PDF	40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
2SK2437 Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process	OCR Scan	PDF	MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking