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    GeneSic Semiconductor Inc FST20045

    Schottky - 30V/80A
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    FST20045 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FST20045 Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF
    FST20045 Coors Components Schottky PowerMod Scan PDF
    FST20045 Microsemi Schottky PowerMod Scan PDF
    FST20045 Microsemi Schottky PowerMod Scan PDF
    FST20045A Microsemi Schottky PowerMod Scan PDF
    FST20045D Microsemi Schottky PowerMod Scan PDF

    FST20045 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FST20020 THRU FST20045 DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-45 Volts Types Up to 45V VRRM Ioslated to Plate POWER MOD TO-249 Maximum Ratings Logo Logo Operating Temperature: -40 C to +175


    Original     		PDF FST20020 FST20045 200Amp O-249 FST20035 FST20040

    T-75 HIGH VOLTAGE DIODES

    Abstract: FST20020 FST20035 FST20040 FST20045
    Text: Transys FST20020 THRU FST20045 Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-45 Volts Types Up to 45V VRRM POWER MOD TO-249AB Maximum Ratings A Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF FST20020 FST20045 200Amp O-249AB FST20035 FST20040 T-75 HIGH VOLTAGE DIODES FST20020 FST20035 FST20040 FST20045

    Untitled

    Abstract: No abstract text available
    Text: FST20020 thru FST20045 Silicon Power Schottky Diode VRRM = 20 V - 45 V IF = 200 A Features • High Surge Capability • Types up to 45 V VRRM TO-249AB Package • Isolated to Plate Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol


    Original     		PDF FST20020 FST20045 O-249AB FST20040 FST20020 FST20035

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		PDF O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    FST20035

    Abstract: FST20040 FST20045 FST20050
    Text: Schottky PowerMod FST20035 - FST20050 A Dim. Inches B C G Baseplate A=Common Anode E F Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher A B C D E F G Millimeters Min. Max. Min. Max. Notes -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160


    Original     		PDF FST20035 FST20050 1/4-20UNC FST20035* FST20040* FST20045* FST20050* O-244AB FST20040 FST20045 FST20050

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    FST20035

    Abstract: FST20040 FST20045 FST20050 r20035
    Text: S c h o tt k y Pow erMcx FS1f20035 FS1r20050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29 17.78 -


    OCR Scan     		PDF r20035 r20050 1/4-20UNC T0-244AB FST20035* FST20040* FST20045* FST20050* FST20035 FST20040 FST20045 FST20050

    C-200

    Abstract: FST20035 FST20040 FST20045 FST20050
    Text: FST20035 —FST20050 Schottky PowerMod J <E i c $ Baseplate A=Common Anode v ! - F - Dim. In c h e s V Baseplate Common Cathode 1/+-20UNC with Captive Lockwosher o -H - gem Min. A B C D E — 1.350 0.700 —


    OCR Scan     		PDF FST20035 FST20050 -20UNC FST20035Â FST20040* FST20045Â FST20050* C-201 C-200 FST20035 FST20040 FST20045

    Untitled

    Abstract: No abstract text available
    Text: FST20035 - FST20050 V ¥ Schottky PowerMod A Dim. Inches B Baseplate A=Common Anode Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher ° N Min. Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29


    OCR Scan     		PDF FST20035 FST20050 1/4-20UNC FST20035* FST20040* FST20045* FST20050* T0-244AB Amperes/35

    Untitled

    Abstract: No abstract text available
    Text: Schottky PowerMod FST20035 — FST20050 <E J i c $ Dim. In c h e s V Baseplate A=Common Anode v ! - F - Baseplate Common Cathode 1/+-20UNC with Captive Lockwosher o -H - gem Min. A B C D E — 1.350 0.700 —


    OCR Scan     		PDF FST20035 FST20050 -20UNC FST20035» FST20040* FST20045» FST20050* FST20050

    FST20035

    Abstract: FST20040 FST20045 FST20050
    Text: Schottky PowerMod FST20035 V FST20050 A Dim. Inches B Baseplate A=Common Anode ¥ Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher ° N Min. Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29 17.78


    OCR Scan     		PDF FST20035 FST20050 1/4-20UNC FST20035* FST20040* FST20045* FST20050* T0-244AB FST20040 FST20045 FST20050

    E1406

    Abstract: BYS97-35 BYS97-40 BYS97-45 BYS97-50 FST20035 FST20040 FST20045 FST20050 ST200
    Text: C<M>RS COMPONENTS » F | a 43 rioGb □□□□mb ^ f ~ "ai INC 2 4 3 0 0 0 6 COORS COMPONENTS IN C Schottky PowerMod 82D 0 0 1 4 6 Guard Ring Reverse Protection Center Tap 50 Volts VpRMI Vrwm 200 Amperes 175°C Junction Temperature Reverse Avalanche Tested


    OCR Scan     		PDF 24300GLi ST200_ FST20035 BYS97-35 FST20040 BYS97-40 FST20045 BYS97-45 FST20050 BYS97-50 E1406 BYS97-35 BYS97-40 BYS97-45 BYS97-50 ST200

    TO-244

    Abstract: No abstract text available
    Text: Schottkv Rectifiers Microsemi : . t :. SCH HS18515 HS18230 HS18035 HS18135 HS18040 HS18140 HS18045 HS18145 HS18380 HS18390 HS183100 CPT20010 CPT20015 CPT20120 CPT20125 CPT20130 CPT20135 FST19035 CPT20035 FST2003S CPT20140 FST19040 1N6459 CPT20040 FST20040


    OCR Scan     		PDF O-244 SCH-14 TO-244