FSS23AOD1
Abstract: No abstract text available
Text: FSS23AOD, FSS23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 200V, rDS ON = 0.330Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS23AOD,
FSS23AOR
1-800-4-HARRIS
FSS23AOD1
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Untitled
Abstract: No abstract text available
Text: FSS23AOD, FSS23A0R h a rris S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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PDF
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FSS23AOD,
FSS23A0R
1-800-4-HARRIS
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