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    FSL9110R Search Results

    FSL9110R Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSL9110R Harris Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Original PDF
    FSL9110R Intersil 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R1 Fairchild Semiconductor 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSL9110R1 Intersil 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R3 Fairchild Semiconductor 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R3 Intersil 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R4 Fairchild Semiconductor 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSL9110R4 Intersil 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSL9110R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL9110D, FSL9110R -100V, Rad Hard in Fairchild for MOSFET

    sem 2105

    Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, sem 2105 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7411 FSL9110R4 -100V,

    2E12

    Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1
    Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL9110D, FSL9110R -100V, 2E12 FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1

    2E12

    Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110
    Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL9110D, FSL9110R -100V, 2E12 FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110

    2E12

    Abstract: FSL9110D FSL9110R
    Text: S E M I C O N D U C T O R FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL9110D, FSL9110R -100V, 1-800-4-HARRIS 2E12 FSL9110D FSL9110R

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9110D, FSL9110R -100V, MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSL9110D, FSL9110R -100V, 36MeV/mg/cm2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9110R4 JANSR2N7411 -100V, MIL-STD-750, MIL-S-19500, 500ms;

    IC SEM 2105

    Abstract: No abstract text available
    Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSL9110R4 -100V, 1-30S2 JANSR2N7411 O-205AF 254mm) IC SEM 2105

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R Semiconductor Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL9110D, FSL9110R -100V, 1-800-4-HARRIS

    AC 151 rIV equivalent

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSL9110D, FSL9110R " • M ■ W » ■ Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features Description • 2.5A, -100V, r[js ON = 1-30i2 T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r


    OCR Scan     		PDF FSL9110D, FSL9110R -100V, 1-30i2 1-800-4-HARRIS AC 151 rIV equivalent

    "MOSFET A3

    Abstract: TC320
    Text: gs H a r r i s S E M I C O N D U C T O R FSL9110D, FSL9110R m ' a a 1 a “ a Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9110D, FSL9110R 1-800-4-HARRIS "MOSFET A3 TC320

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264