FSL23A4D1 Search Results

FSL23A4D1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FSL23A4D1		Fairchild Semiconductor	5A, 250V, 0.480 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF
FSL23A4D1		Intersil	5A, 250V, 0.480 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF

FSL23A4D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1E14 Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSL23A4D, FSL23A4R 1E14 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3
1E14 Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSL23A4D, FSL23A4R 1E14 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Rad Hard in Fairchild for MOSFET Abstract: No abstract text available Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSL23A4D, FSL23A4R Rad Hard in Fairchild for MOSFET
Untitled Abstract: No abstract text available Text: S E M I C O N D U C T O R FSL23A4D, FSL23A4R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSL23A4D, FSL23A4R 1-800-4-HARRIS
Untitled Abstract: No abstract text available Text: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSL23A4D, FSL23A4R O-205AF 254mm)
Untitled Abstract: No abstract text available Text: SI! H a r r is S E M I C O N D U C T O R FSL23A4D, FSL23A4R U W U 1 * Description Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	PDF	ary1998 FSL23A4D, FSL23A4R 1-800-4-HARRIS