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    FSL234R1 Search Results

    FSL234R1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSL234R1 Fairchild Semiconductor 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSL234R1 Intersil 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF

    FSL234R1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSL234D, FSL234R

    Untitled

    Abstract: No abstract text available
    Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs


    OCR Scan
    PDF FSL234D, FSL234R MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSL234D, FSL234R 36MeV/mg/cm2 100Kolder) 254mm)