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    FSJ9055D1 Search Results

    FSJ9055D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSJ9055D1 Intersil 55A, -60V, 0.029 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

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    2E12

    Abstract: FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1
    Text: FSJ9055D, FSJ9055R Semiconductor 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    FSJ9055D, FSJ9055R O-254AA MIL-S-19500 2E12 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ9055D, FSJ9055R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs November 1997 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    FSJ9055D, FSJ9055R 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSJ9055D, FSJ9055R 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    FSJ9055D, FSJ9055R MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF