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    FSJ163R Search Results

    FSJ163R Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSJ163R Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSJ163R1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSJ163R1 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSJ163R3 Fairchild Semiconductor Radiation Hardend, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSJ163R3 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSJ163R4 Fairchild Semiconductor Radiation Hardend, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSJ163R4 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF

    FSJ163R Datasheets Context Search

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    1E14

    Abstract: 2E12 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 Rad Hard in Fairchild for MOSFET
    Text: FSJ163D, FSJ163R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects


    Original
    PDF FSJ163D, FSJ163R 1E14 2E12 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3
    Text: FSJ163D, FSJ163R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects


    Original
    PDF FSJ163D, FSJ163R 1E14 2E12 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3

    Untitled

    Abstract: No abstract text available
    Text: FSJ163D, FSJ163R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects


    Original
    PDF FSJ163D, FSJ163R

    Untitled

    Abstract: No abstract text available
    Text: FSJ163D, FSJ163R f f X R R /S D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e


    OCR Scan
    PDF FSJ163D, FSJ163R 1-800-4-HARRIS