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Text: 2N1130 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50 h(FE) Max. Current gain.165
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2N1130
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Abstract: No abstract text available
Text: 2N1129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200
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2N1129
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Abstract: No abstract text available
Text: MA2043 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)105â V(BR)CBO (V)105 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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MA2043
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Abstract: No abstract text available
Text: 2N1186 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45ã V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.33 h(FE) Max. Current gain.
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2N1186
Freq750kÂ
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Abstract: No abstract text available
Text: 2N105 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)15m Absolute Max. Power Diss. (W)35m Maximum Operating Temp (øC)50 I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.
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2N105
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