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    Untitled

    Abstract: No abstract text available
    Text: 2N1130 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50 h(FE) Max. Current gain.165


    Original     		2N1130 Freq750kà PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200


    Original     		2N1129 Freq750kà PDF