MA4C278H
Abstract: No abstract text available
Text: MA4C278H Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.200u Total Cap. (F)650f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq50G Series Induct. (H)100p R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium
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MA4C278H
Freq50G
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32.768khz crystal 2 pin
Abstract: programming MSC1202
Text: MSC1202 MS C12 02 SBAS328 – JULY 2004 FEATURES ANALOG FEATURES ● 16 BITS NO MISSING CODES ● 16 BITS EFFECTIVE RESOLUTION UP TO 200Hz Low Noise: 600nV at 10Hz ● PGA FROM 1 TO 128 ● PRECISION ON-CHIP VOLTAGE REFERENCE ● 6 DIFFERENTIAL/SINGLE-ENDED CHANNELS
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MSC1202
SBAS328
200Hz
600nV
02ppm/
8051-COMPATIBLE
33MHz
32kHz
32.768khz crystal 2 pin
programming MSC1202
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lg e 1941 lcd monitor circuit diagram
Abstract: 2M22A GDE 4C STR G 6351 GIGABYTE G41 P22-P27 MC68360 MPC821 PA15 "Continuous phase modulation" cpm "white" "filter" demodulator
Text: PowerPC MPC821 Portable Systems Microprocessor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MPC821
MPC821
lg e 1941 lcd monitor circuit diagram
2M22A
GDE 4C
STR G 6351
GIGABYTE G41
P22-P27
MC68360
PA15
"Continuous phase modulation" cpm "white" "filter" demodulator
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Untitled
Abstract: No abstract text available
Text: CEN-U51 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1.0
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CEN-U51
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N5941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N5941
Freq50M
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Untitled
Abstract: No abstract text available
Text: BCP52 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCP52
Freq50M
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Untitled
Abstract: No abstract text available
Text: HEPS3028 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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HEPS3028
Freq50M
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Untitled
Abstract: No abstract text available
Text: DTL3508 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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DTL3508
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k
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2N6353
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N5672+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)150º V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)135 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)15
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2N5672
Freq50M
time500n
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Untitled
Abstract: No abstract text available
Text: CEN-U02 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)150m
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CEN-U02
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2SC1520 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)200m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1520
Freq50M
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Untitled
Abstract: No abstract text available
Text: FZT758 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)320 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)100m
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FZT758
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N3553+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30
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2N3553
Freq500M
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Untitled
Abstract: No abstract text available
Text: AP30-12L Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)36ã V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AP30-12L
Freq50M
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Untitled
Abstract: No abstract text available
Text: DTL3512 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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DTL3512
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2SD886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD886
Freq50M
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Untitled
Abstract: No abstract text available
Text: BCP52-16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCP52-16
Freq50M
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Untitled
Abstract: No abstract text available
Text: SDT7904 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT7904
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2SC2987 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)12 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC2987
Freq50M
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Untitled
Abstract: No abstract text available
Text: PT6984 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)30 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PT6984
Freq50M
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Untitled
Abstract: No abstract text available
Text: FZT458 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)400m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)50m
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FZT458
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N6352+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k
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2N6352
Freq50M
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Untitled
Abstract: No abstract text available
Text: 2N6032+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50
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2N6032
Freq50M
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