FREQ30 Search Results

Contextual Info: A1B630E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

TD436

Contextual Info: TD436 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 3.7m Peak Curr. Tol. Total Cap. (F).38p Ip/Iv Min8.0 Vp75m Vv390m Fwd Volt @Ipeak570m Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)5.0 Neg Resist.40 Semiconductor MaterialGermanium

Contextual Info: 112530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100’

Contextual Info: 102530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100õ

Contextual Info: A1B630D Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: A1B630C Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: MS1575A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F).40p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H).10n R(series) (Ohms)7.0 Neg Resist.60 Semiconductor MaterialGaSb

Contextual Info: A1B630A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.3m Peak Curr. Tol. Total Cap. (F)450f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30M Series Induct. (H)300p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: PZT2222AT1 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N372/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CIL256 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N3046/78 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m

Contextual Info: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

syh-2

Abstract: xbp 101 DIODE marking SL x7 CCIR601 CCIR656 TMC2192 SE024 eb319 SE028 20LX d
Contextual Info: FAIRCHILD S E M IC O N D U C T O R www.fairchildsemi.com tm T M C 2 1 92 1 0 Bit E n c o d e r Features • • • • • • Programmable color space matrix 8:8:8 video reconstruction Three 10 bit D/A’s with independent trim Individual power down modes for each D/A

Contextual Info: Raytheon E le c tr o n ic s Semiconductor Division TM C 22290 M u ltistan d ard D igital V id e o En cod e r Features • All-digital video encoding • Internal digital subcarrier synthesizer • 8-bit parallel CCIR-601/CCIR-656/ANSI/SM PTE 125M input iormat

bd-9a

Abstract: led matrix 8 8 one colour ST-163E ph-12 diode TIP 317 data sheet CCIR601 CCIR656 TMC2192 FR17 diode
Contextual Info: www.fairchildsemi.com TMC2192 10 Bit Encoder Features Programmable color space matrix 8:8:8 video reconstruction Three 10 bit D/A’s with independent trim Individual power down modes for each D/A Multiple output formats – S-video – Composite – Digital composite output

MCF4

Contextual Info: www.fairchildsemi.com S E M I C O N D U C T O R tm T MC 2 1 9 3 1 0 Bit Encoder Features Programmable color space matrix 8:8:8 video reconstruction Four 10 bit D/A’s with independent trim Individual power down modes for each D/A Multiple output formats - RGB

Contextual Info: www.cadeka.com TMC2193 10 Bit Encoder Features • • • • • • Multiple input formats – 24 bit RGB – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes

CCIR601

Abstract: CCIR656 TMC2192 MARKING TP27 FR17 diode ST-163E
Contextual Info: www.fairchildsemi.com TMC2192 10 Bit Encoder Features • Multiple input formats – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes – Free-run – Subcarrier reset

Contextual Info: 1748-1810 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)40 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MMST2222A Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)70.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: B3594 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MAT04AY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)