FREESCALE SEMICONDUCTOR BODY MARKING Search Results

FREESCALE SEMICONDUCTOR BODY MARKING Result Highlights (5)

Part	Manufacturer	Description
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
MRMS591P	Murata Manufacturing Co Ltd	Magnetic Sensor
SCR410T-K03-PCB	Murata Manufacturing Co Ltd	1-Axis Gyro Sensor on Evaluation Board

FREESCALE SEMICONDUCTOR BODY MARKING Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
4066 spice model Abstract: LL1608-FH MBC13900 MBC13900T1 Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package	Original	MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model LL1608-FH MBC13900T1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking	Original	MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20	PDF
905 motorola Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking	Original	MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20 905 motorola GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v	PDF
MBC13720 Abstract: MBC13720T1 low noise amplifier 0947 Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking	Original	MBC13720/D MBC13720 OT-363) MBC13720T1 OT-363 MBC13720 MBC13720T1 low noise amplifier 0947	PDF
qfn-12 Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST Text: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820	Original	MC13820/D MC13820 QFN-12) QFN-12 MC13820 qfn-12 cdm 12.1 laser QFN12 IP3 BOOST	PDF
MC13770 Abstract: PC13770FC QFN-12 LNA marking R0 Text: Freescale Semiconductor, Inc. Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package	Original	MC13770PP/D MC13770 QFN-12) PC13770FC QFN-12 MC13770 PC13770FC QFN-12 LNA marking R0	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking	Original	MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20	PDF
MOTOROLA RF POWER SEMICONDUCTOR DETAIL Abstract: JEDEC QFN case outline MRFIC1870 QFN-20 Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking	Original	MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20 MOTOROLA RF POWER SEMICONDUCTOR DETAIL JEDEC QFN case outline	PDF
M13892AJ Abstract: MC13892VL MC13892AJVK MC13892 MC13892JVK MC13892VK M13892 MC13892J MC13892AJVL MC13892 registers Text: Document Number: MC13892ER Rev. 7.0, 10/2010 Freescale Semiconductor Errata MC13892, Silicon Errata Introduction This errata document applies to the following devices: Package 12x12 7x7 Part Number Functional Description Device Marking Mask ID Silicon Revision	Original	MC13892ER MC13892, MC13892VL 12x12 DB00M29X MC13892JVL MC13892AJVL M13892AJ MC13892VL MC13892AJVK MC13892 MC13892JVK MC13892VK M13892 MC13892J MC13892AJVL MC13892 registers	PDF
SECF036 Abstract: MCF5214 MCF5216 MCF5216DE MCF5282 SECF038 Text: MCF5216 Chip Errata Silicon Revision: All Supports: MCF5214, MCF5216 Summary of MCF5214/16 Errata All current MCF5214/16 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is	Original	MCF5216 MCF5214, MCF5216 MCF5214/16 XXX0324 XXX0326 SECF036 MCF5214 MCF5216DE MCF5282 SECF038	PDF
MCF528X Abstract: MCF5282 MCF5281 MCF5282DE L95M Text: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is	Original	MCF5282 MCF5281, MCF5282 MCF528x MCF5281/82 XXX0324 XXX0326 MCF5281 MCF5282DE L95M	PDF
98ARL10519D Abstract: JESD51-5 JEDEC JESD51-8 BGA AN2409 JESD51-7 JESD51-51 jesd51 8 54ld JESD51-8 Text: Freescale Semiconductor Application Note AN2409 Rev. 1.0, 12/2005 Small Outline Integrated Circuit Fine Pitch Package SOIC 1.0 Purpose This Application Note provides general package information including package dimensions, guidelines for printed circuit board (PCB) layout,	Original	AN2409 98ARL10519D JESD51-5 JEDEC JESD51-8 BGA AN2409 JESD51-7 JESD51-51 jesd51 8 54ld JESD51-8	PDF
465B Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8 Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BSR3 smd transistor marking j8 smd transistor marking z8	PDF
MRF373A Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A MRF373ALSR1 MRF373AS	PDF

smd transistor marking z8 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8	PDF
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085AR3 MRF18085ALSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MFR18060BLR3 MFR18060BLSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B MFR18060BLR3 MFR18060BLSR3 MRF18060B	PDF
MRF18030A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier	Original	MRF18030A MRF18030ALR3 MRF18030ALSR3	PDF
MRF19090 Abstract: 465B CDR33BX104AKWS MRF19090R3 MRF19090SR3 Text: Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and	Original	MRF19090 MRF19090R3 MRF19090SR3 MRF19090 465B CDR33BX104AKWS MRF19090SR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
"RF power MOSFETs" Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206 Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206	PDF
smd transistor marking z1 Abstract: marking TRANSISTOR SMD nf c4 MRF18060A Text: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z1 marking TRANSISTOR SMD nf c4	PDF
Untitled Abstract: No abstract text available Text: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030 MRF9030LR1 MRF9030LSR1	PDF
MRF18085A Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085ALR3 MRF18085A F 5M 365 R AN1955 GSM1800 MRF18085ALSR3	PDF

FREESCALE SEMICONDUCTOR BODY MARKING Search Results

FREESCALE SEMICONDUCTOR BODY MARKING Result Highlights (5)

FREESCALE SEMICONDUCTOR BODY MARKING Datasheets Context Search

4066 spice model

Untitled

905 motorola

MBC13720

qfn-12

MC13770

Untitled

MOTOROLA RF POWER SEMICONDUCTOR DETAIL

M13892AJ

SECF036

MCF528X

98ARL10519D

465B

MRF373A

smd transistor marking z8

MRF18085A

Untitled

MRF18030A

MRF19090

Untitled

"RF power MOSFETs"

smd transistor marking z1

Untitled

MRF18085A