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    MRF9030 Search Results

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    MRF9030 Price and Stock

    Rochester Electronics LLC MRF9030GMR1

    RF MOSFET TO270
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    DigiKey MRF9030GMR1 Bulk 500 14
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    Rochester Electronics LLC MRF9030GNR1

    RF MOSFET LDMOS TO270-2
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    DigiKey MRF9030GNR1 Bulk 234 13
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    Rochester Electronics LLC MRF9030MBR1

    RF MOSFET 26V TO272-2
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    DigiKey MRF9030MBR1 Bulk 39 14
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    NXP Semiconductors MRF9030NR1

    RF MOSFET LDMOS 26V TO270-2
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    NXP Semiconductors MRF9030LR1

    RF MOSFET LDMOS 26V NI360
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    Find more MRF9030 price and stock on Findchips.com

    MRF9030 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF9030 Freescale Semiconductor MRF9030LR1, MRF9030LSR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9030 Motorola RF POWER FIELD EFFECT TRANSISTORS Original PDF
    MRF9030LR1 Freescale Semiconductor 30W RF PWR FET NI-360L Original PDF
    MRF9030LR1 Freescale Semiconductor 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9030LSR1 Freescale Semiconductor 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9030LSR1 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    MRF9030LSR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9030LSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360S Original PDF
    MRF9030M Freescale Semiconductor MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9030MBR1 Freescale Semiconductor RF POWER FET 30W 1 GHZ Original PDF
    MRF9030MBR1 Freescale Semiconductor 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9030MBR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9030MBR1 Motorola 945 MHz, 30 W, 26 V, LATERAL N-CHANNEL, BROADBAND, RF POWER MOSFETs Original PDF
    MRF9030MR1 Freescale Semiconductor PLASTIC LDMOS RF PWR AMP Original PDF
    MRF9030MR1 Freescale Semiconductor 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9030MR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9030MR1 Motorola 945 MHz, 30 W, 26 V, LATERAL N-CHANNEL, BROADBAND, RF POWER MOSFETs Original PDF
    MRF9030NBR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF9030NR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF9030NR1 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF

    MRF9030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9030MBR1

    Abstract: MRF9030MR1 100B7R5JP
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1

    MRF9030

    Abstract: MRF9030LSR1 MRF9030R1
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030R1 MRF9030LSR1 MRF9030R1 MRF9030 MRF9030LSR1

    MRF9030MBR1

    Abstract: MRF9030MR1
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 DEVICEMRF9030M/D MRF9030MBR1

    44F3360

    Abstract: 93F2975
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		PDF MRF9030N MRF9030NBR1 MRF9030N

    MRF9030L

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9030 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030 MRF9030LR1 MRF9030LSR1 MRF9030L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030 MRF9030S MRF9030SR1 MRF9030/D

    MRF9030N

    Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030N MRF9030NR1 MRF9030N 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF Charact192 MRF9030LR1 MRF9030LSR1

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    VIPer 32

    Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17

    945 TRANSISTOR

    Abstract: marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 8, 9/2008 RF Power Field Effect Transistor MRF9030LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030 MRF9030LR1 945 TRANSISTOR marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02

    MRF9030MBR1

    Abstract: MRF9030MR1 TO-270-2
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030N MRF9030NR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030 MRF9030LR1

    MRF9030L

    Abstract: motorola MOSFET 935 MRF9030 MRF9030LR1 MRF9030LSR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030LR1 MRF9030L motorola MOSFET 935 MRF9030 MRF9030LSR1

    transistor d 945

    Abstract: 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP


    Original     		PDF MRF9030 MRF9030LSR1 transistor d 945 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030/D

    TO-270-2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

    Untitled

    Abstract: No abstract text available
    Text: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030 MRF9030LR1 MRF9030LSR1

    VIPer 32

    Abstract: TO272
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 VIPer 32 TO272

    mrf9030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030 MRF9030S MRF9030SR1