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    FREE IC NPN TRANSISTOR Search Results

    FREE IC NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    FREE IC NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R OT-89 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R


    Original     		PDF MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B

    MJE13001

    Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B


    Original     		PDF MJE13001 MJE13001L MJE13001G MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001 MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92

    MJE-13001

    Abstract: MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B


    Original     		PDF MJE13001 MJE13001L MJE13001G MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-B MJE-13001 MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060/A NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		PDF 2SD1060/A 2SD1060G-x-AB3-R OT-89 2SD1060AG-x-AB3-R 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B


    Original     		PDF MJE13001-P MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K MJE13001-PL-x-T92-A-B MJE13001-PG-x-T92-A-B MJE13001-PL-x-T92-A-K MJE13001-PG-x-T92-A-K QW-R201-088

    MJE13001

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R


    Original     		PDF MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-T92-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B


    Original     		PDF MJE13001-P MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJE13001G-P-x-T92-F-B MJE13001L-P-x-T92-F-K MJE13001G-P-x-T92-F-K QW-R201-088

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B


    Original     		PDF MJE13001-P MJE13001L-P-x-T92-B MJE13001G-P-x-T92-B MJE13001L-P-x-T92-K MJE13001G-P-x-T92-K MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K QW-R201-088

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-Q-x-AB3-A-R


    Original     		PDF MJE13001-Q MJE13001G-Q-x-AB3-A-R OT-89 MJE13001G-Q-x-AB3-F-R MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K

    2SD313

    Abstract: 2SB507 2sd313 equivalent 2SD313 E
    Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE


    Original     		PDF 2SD313 2SB507 O-220 06-Feb-07 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 E

    MJE-13001

    Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R


    Original     		PDF MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001

    MUN5211DW

    Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking
    Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 P b Lead Pb -Free 1 4 5 6 NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Thermal Characteristics Characteristics (1)


    Original     		PDF MUN5211DW OT-363 SC-88) 29-Dec-05 OT-363 MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking

    Untitled

    Abstract: No abstract text available
    Text: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volt VOLTAGE POWER 330 mW • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free


    Original     		PDF BC817 500mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, BC817-16 BC817-25 BC817-40 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free


    Original     		PDF 2SC2411K 225mW 500mA 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    2SC5343 equivalent

    Abstract: 2SC5343 equivalent for 2SC5343 transistor 2sc5343
    Text: 2SC5343 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 * Excellent hFE Linearity : hFE 2 =100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)


    Original     		PDF 2SC5343 150mA 100mA 01-Jun-2002 2SC5343 equivalent 2SC5343 equivalent for 2SC5343 transistor 2sc5343

    Untitled

    Abstract: No abstract text available
    Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 * “G” Lead Pb -Free 1 4 5 6 NPN+NPN 2 4 3 SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC Value


    Original     		PDF MUN5211DW OT-363 SC-88) OT-363

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904TB6 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V SOT-563 • Collector current IC = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMDT3904TB6 200mA 2002/95/EC IEC61249 OT-563 OT-563, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: BC817-16W SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 300 mW FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		PDF BC817-16W 500mA 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC817-16W BC817-25W BC817-40W 2011-REV

    bc847cs

    Abstract: No abstract text available
    Text: BC847CSTB6 DUAL NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 45 Volts POWER 210 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 45V • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF BC847CSTB6 100mA 2002/95/EC IEC61249 OT-563, MIL-STD-750, 2012-REV bc847cs

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		PDF MMBT2222ATB 600mA 2011/65/EU IEC61249 OT-523, MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		PDF BC846AW BC850CW 100mA 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC846AW BC847AW BC848AW