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    FRAM MEMORY Search Results

    FRAM MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    MD2716M/B Rochester Electronics LLC 2716M - 2Kx8 EPROM Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    2964B/BUA Rochester Electronics LLC 2964B - Dynamic Memory Controller Visit Rochester Electronics LLC Buy
    TN28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy

    FRAM MEMORY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fram

    Abstract: MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R
    Text: AN app note FRAM MCU Key Strengths and Applications Introduction0 Fujitsu’s Ferroelectric Random Access Memory FRAM microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be


    Original     		FRAM-AN-21377-09/2010 fram MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-3v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00010-3v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19) FPT-28P-M19 FPT-28P-M17 FPT-28P-M01 PDF

    MB85R256FPF

    Abstract: MB85R256FPF-G-BND-ERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-2v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00010-2v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19 FPT-28P-M17 FPT-28P-M01 MB85R256FPF MB85R256FPF-G-BND-ERE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00012-3v0-E FRAM MB85R4001A MB85R4001A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00012-3v0-E MB85R4001A MB85R4001A FPT-48P-M01) PDF

    FUJITSU FRAM

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00013-2v1-E FRAM MB85R4002A MB85R4002A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00013-2v1-E MB85R4002A MB85R4002A 15mA5 I/O16 I/O15 I/O14 I/O13 I/O12 FUJITSU FRAM PDF

    MB85RC256

    Abstract: MB85RC256VPF-G-JNERE2
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00019-2v0-E MB85RC256V MB85RC256V 256K-bits MB85RC256 MB85RC256VPF-G-JNERE2 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-6E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13110-6E MB85RC128 MB85RC128 128K-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48) PDF

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48) PDF

    MB85R256FPF-G-BND-ERE1

    Abstract: MB85R256F
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-1v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00010-1v0-E MB85R256F MB85R256F 256K-bits 28-pins, FPT-28P-M19 FPT-28P-M17 MB85R256FPF-G-BND-ERE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13109-6E MB85RC64 MB85RC64 64K-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-2E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13109-2E MB85RC64 MB85RC64 64K-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-4E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13110-4E MB85RC128 MB85RC128 128K-bits PDF

    FPT-8P-M02

    Abstract: MB85RC16VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00011-1v0-E FRAM MB85RC16V MB85RC16V is a 16K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00011-1v0-E MB85RC16V MB85RC16V 16K-bits FPT-8P-M02 MB85RC16VPNF-G-JNERE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-2E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13110-2E MB85RC128 MB85RC128 128K-bits PDF

    MB85RC64PNF-G-JNERE1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP05-13109-4E MB85RC64 MB85RC64 64K-bits MB85RC64PNF-G-JNERE1 PDF

    autonet

    Abstract: airbag
    Text: FRAM FRAM-Technologie bringt „Intelligenz" in Smart-AirbagSysteme In Applikationen w ie den so genannten Smart-Airbags hat sich die FRAM -Speichertechnologie bereits etabliert, w ie das Beispiel des Zulieferers lür Automobil Elektronik Hyundai Autonet zeigt.


    OCR Scan     		WI2007 autonet airbag PDF

    MB85RS64PNF-G-JNE1

    Abstract: MB85RS64
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00016-1v0-E FRAM MB85RS64 MB85RS64 is a 64K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00016-1v0-E MB85RS64 MB85RS64 64K-bits MB85RS64PNF-G-JNE1 PDF

    MB85RC64V

    Abstract: MB85RC64VPNFG-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-0v01-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00014-0v01-E MB85RC64V MB85RC64V 64K-bits MB85RC64VPNFG-JNERE1 PDF

    MB85RS1MT

    Abstract: MB85RS1MTPNF-G-JNE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00024-0v01-E FRAM MB85RS1MT MB85RS1MT is a 1M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00024-0v01-E MB85RS1MT MB85RS1MT 85comes MB85RS1MTPNF-G-JNE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits PDF

    MB85RS64V

    Abstract: MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00017-0v01-E FRAM MB85RS64V MB85RS64V is a 64K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00017-0v01-E MB85RS64V MB85RS64V 64K-bits MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1 PDF

    MB85RS16PNF

    Abstract: MB85RS16
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-1v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00015-1v0-E MB85RS16 MB85RS16 16K-bits MB85RS16PNF PDF