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    FRAM MEMORY Search Results

    FRAM MEMORY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MSP430FR2632IYQWT Texas Instruments 16 MHz Ultra-Low-Power Microcontroller With 8 KB FRAM, CapTIvate touch technology 24-DSBGA -40 to 85 Visit Texas Instruments Buy
    MSP430FR6005IPZR Texas Instruments Ultrasonic Sensing MCU with 128KB FRAM, 8KB RAM, LCD for water meters Visit Texas Instruments Buy
    MSP430FR6007IPZR Texas Instruments Ultrasonic Sensing MCU with 256KB FRAM, 8KB RAM, LCD for water meters Visit Texas Instruments Buy
    MSP430FR2632IYQWR Texas Instruments 16 MHz Ultra-Low-Power Microcontroller With 8 KB FRAM, CapTIvate touch technology 24-DSBGA -40 to 85 Visit Texas Instruments Buy
    MSP430FR5992IZVWR Texas Instruments 16 MHz Ultra-Low-Power MCU With 128 KB FRAM, 8 KB SRAM, Low-Energy Vector Math Accelerator 87-NFBGA -40 to 85 Visit Texas Instruments
    MSP430FR5994IZVWR Texas Instruments 16 MHz Ultra-Low-Power MCU With 256 KB FRAM, 8 KB SRAM, Low-Energy Vector Math Accelerator 87-NFBGA -40 to 85 Visit Texas Instruments Buy

    FRAM MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fram

    Abstract: MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R
    Text: AN app note FRAM MCU Key Strengths and Applications Introduction0 Fujitsu’s Ferroelectric Random Access Memory FRAM microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be


    Original     		PDF FRAM-AN-21377-09/2010 fram MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-3v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-3v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19) FPT-28P-M19 FPT-28P-M17 FPT-28P-M01

    MB85R256FPF

    Abstract: MB85R256FPF-G-BND-ERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-2v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-2v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19 FPT-28P-M17 FPT-28P-M01 MB85R256FPF MB85R256FPF-G-BND-ERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00012-3v0-E FRAM MB85R4001A MB85R4001A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00012-3v0-E MB85R4001A MB85R4001A FPT-48P-M01)

    FUJITSU FRAM

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00013-2v1-E FRAM MB85R4002A MB85R4002A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00013-2v1-E MB85R4002A MB85R4002A 15mA5 I/O16 I/O15 I/O14 I/O13 I/O12 FUJITSU FRAM

    MB85RC256

    Abstract: MB85RC256VPF-G-JNERE2
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00019-2v0-E MB85RC256V MB85RC256V 256K-bits MB85RC256 MB85RC256VPF-G-JNERE2

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-6E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-6E MB85RC128 MB85RC128 128K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48)

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		PDF MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)

    MB85R256FPF-G-BND-ERE1

    Abstract: MB85R256F
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-1v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-1v0-E MB85R256F MB85R256F 256K-bits 28-pins, FPT-28P-M19 FPT-28P-M17 MB85R256FPF-G-BND-ERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-6E MB85RC64 MB85RC64 64K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-2E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-2E MB85RC64 MB85RC64 64K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-4E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-4E MB85RC128 MB85RC128 128K-bits

    FPT-8P-M02

    Abstract: MB85RC16VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00011-1v0-E FRAM MB85RC16V MB85RC16V is a 16K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00011-1v0-E MB85RC16V MB85RC16V 16K-bits FPT-8P-M02 MB85RC16VPNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-2E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-2E MB85RC128 MB85RC128 128K-bits

    MB85RC64PNF-G-JNERE1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-4E MB85RC64 MB85RC64 64K-bits MB85RC64PNF-G-JNERE1

    MB85RS64PNF-G-JNE1

    Abstract: MB85RS64
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00016-1v0-E FRAM MB85RS64 MB85RS64 is a 64K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00016-1v0-E MB85RS64 MB85RS64 64K-bits MB85RS64PNF-G-JNE1

    MB85RC64V

    Abstract: MB85RC64VPNFG-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-0v01-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00014-0v01-E MB85RC64V MB85RC64V 64K-bits MB85RC64VPNFG-JNERE1

    MB85RS1MT

    Abstract: MB85RS1MTPNF-G-JNE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00024-0v01-E FRAM MB85RS1MT MB85RS1MT is a 1M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00024-0v01-E MB85RS1MT MB85RS1MT 85comes MB85RS1MTPNF-G-JNE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits

    MB85RS64V

    Abstract: MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00017-0v01-E FRAM MB85RS64V MB85RS64V is a 64K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00017-0v01-E MB85RS64V MB85RS64V 64K-bits MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1

    MB85RS16PNF

    Abstract: MB85RS16
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-1v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00015-1v0-E MB85RS16 MB85RS16 16K-bits MB85RS16PNF

    autonet

    Abstract: airbag
    Text: FRAM FRAM-Technologie bringt „Intelligenz" in Smart-AirbagSysteme In Applikationen w ie den so genannten Smart-Airbags hat sich die FRAM -Speichertechnologie bereits etabliert, w ie das Beispiel des Zulieferers lür Automobil Elektronik Hyundai Autonet zeigt.


    OCR Scan     		PDF WI2007 autonet airbag