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    FQPF9N25CT Price and Stock

    onsemi FQPF9N25CT

    MOSFET N-CH 250V 8.8A TO220F
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    DigiKey FQPF9N25CT Tube 1,000
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    Avnet Americas FQPF9N25CT Tube 4 Weeks 584
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    FQPF9N25CT Tube 0 Weeks, 2 Days 1,042
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    Newark FQPF9N25CT Bulk 1,000
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    Rochester Electronics FQPF9N25CT 783 1
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    Flip Electronics FQPF9N25CT 1,000
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    Flip Electronics FQPF9N25CT

    N-CHANNEL QFET MOSFET 250V, 8.8A
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    Fairchild Semiconductor Corporation FQPF9N25CT

    Power Field-Effect Transistor, 8.8A, 250V, 0.43ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FQPF9N25CT 43 1
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    FQPF9N25CT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQPF9N25CT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.8A TO-220F Original PDF
    FQPF9N25CT Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FQPF9N25CT_NL Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series Original PDF

    FQPF9N25CT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FQPF9N25C / FQPF9N25CT N-Channel QFET MOSFET 250 V, 8.8 A, 430 mΩ Features Description • 8.8 A, 250 V, RDS on = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FQPF9N25C FQPF9N25CT

    9N25C

    Abstract: FQPF9N25CT
    Text: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP9N25C/FQPF9N25C FQPF9N25C FQPF9N25CT 9N25C