Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.
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FQB3N60,
FQI3N60
FQB3N60
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FQB3N60
Abstract: FQI3N60
Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB3N60
FQI3N60
FQI3N60
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Untitled
Abstract: No abstract text available
Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB3N60
FQI3N60
FQI3N60TU
O-262
FQI3N60
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Untitled
Abstract: No abstract text available
Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB3N60
FQI3N60
FQB3N60TM
O-263
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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SSI5N60A
Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -
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O-262
O-262
ISL9N303AS3
HUF75345S3
HUF75333S3
FQI85N06
FQI65N06
FQI55N06
FQI50N06
FQI30N06
SSI5N60A
FQI13N06
FQI20N06
FQI30N06
FQI50N06
FQI55N06
FQI65N06
FQI85N06
HUF75333S3
HUF75345S3
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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fairchild mosfet selection guide
Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics
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Power247TM,
fairchild mosfet selection guide
FQP27P06
FQA6N80
FQP2N90
fairchild korea
FQP17P06
FQPF*3n60
FQA7N80
fairchild p channel mosfet
FQA19N60
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FQB3N60
Abstract: FQI3N60
Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V Advanced New Design R ds ON = 3.6Î2 Avalanche Rugged Technology lD = 3.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 10nC (Typ.)
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FQB3N60,
FQI3N60
D2PAK/TO-263
PAK/TO-263
FQB3N60
FQI3N60
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.
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FQB3N60,
FQI3N60
D2PAK/TO-263
D2PAK/TO-263
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