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    FQB3N60 Price and Stock

    Rochester Electronics LLC FQB3N60CTM

    MOSFET N-CH 600V 3A D2PAK
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    DigiKey FQB3N60CTM Bulk 452
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    Fairchild Semiconductor Corporation FQB3N60CTM

    3A, 600V, 3.4ohm, N-Channel Power MOSFET, TO-263AB '
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    Rochester Electronics FQB3N60CTM 1,376 1
    • 1 $0.6392
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    • 100 $0.6008
    • 1000 $0.5433
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    FQB3N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB3N60 Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQB3N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQB3N60C Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQB3N60CTM Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQB3N60CTM Fairchild Semiconductor 600V N-Channel MOSFET Original PDF

    FQB3N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.


    Original     		PDF FQB3N60, FQI3N60 FQB3N60

    FQB3N60C

    Abstract: FQB3N60CTM 3A, 50V BRIDGE
    Text: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60C FQB3N60C FQB3N60CTM 3A, 50V BRIDGE

    FQB3N60C

    Abstract: FQB3N60CTM mosfet 600V 3A
    Text: TM QFET FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60C FQB3N60C FQB3N60CTM mosfet 600V 3A

    FQB3N60

    Abstract: FQI3N60
    Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60 FQI3N60 FQI3N60

    Untitled

    Abstract: No abstract text available
    Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60 FQI3N60 FQI3N60TU O-262 FQI3N60

    Untitled

    Abstract: No abstract text available
    Text: FQB3N60 / FQI3N60 April 2000 QFET TM FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60 FQI3N60 FQB3N60TM O-263

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    fqpf5n60c

    Abstract: FAN7711 FQPF18N50 Fairchild MOSFET FQT1N80 FQP9N50C FQPF*5n50c fjp13009 FJP5027 FQD7P20
    Text: Fairchild’s Solutions for Lighting Applications H I D LIGHTING C O M PA C T F L U O R E S C E N T L A M P B A L L A S T S S I G NAGE LIGHTING LINEAR FLUORESCENT LAMP BALLASTS LINEAR FLUORESCENT LAMP BALLAST 3 Ballast Control ICs 3 High Voltage Gate Drivers HVIC


    Original     		PDF FAN7532/FAN7711 FAN7544 FCPF7N60 O-220F FCPF11N60 FCPF20N60 fqpf5n60c FAN7711 FQPF18N50 Fairchild MOSFET FQT1N80 FQP9N50C FQPF*5n50c fjp13009 FJP5027 FQD7P20

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    FQB3N60

    Abstract: FQI3N60
    Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V Advanced New Design R ds ON = 3.6Î2 Avalanche Rugged Technology lD = 3.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 10nC (Typ.)


    OCR Scan     		PDF FQB3N60, FQI3N60 D2PAK/TO-263 PAK/TO-263 FQB3N60 FQI3N60