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    FQI13N50CTU Price and Stock

    onsemi FQI13N50CTU

    MOSFET N-CH 500V 13A I2PAK
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    Rochester Electronics FQI13N50CTU 15,446 1
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    TME FQI13N50CTU 1
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    Rochester Electronics LLC FQI13N50CTU

    POWER FIELD-EFFECT TRANSISTOR, 1
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    Fairchild Semiconductor Corporation FQI13N50CTU

    Power Field-Effect Transistor, 13A, 500V, 0.48ohm, N-Channel, MOSFET, TO-262AA
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    Rochester Electronics FQI13N50CTU 1,000 1
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    FQI13N50CTU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI13N50CTU Fairchild Semiconductor 500V N-Channel Advance Q-FET C-Series Original PDF
    FQI13N50CTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 13A I2PAK Original PDF

    FQI13N50CTU Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FQI13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 mΩ Features Description • 13 A, 500 V, RDS on = 480 mΩ (Max.) @VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		PDF FQI13N50C

    13n50c

    Abstract: No abstract text available
    Text: TM FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N50C/FQI13N50C FQI13N50C FQI13N50CTU 13n50c