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    FQD13N10L Price and Stock

    onsemi FQD13N10LTM

    MOSFET N-CH 100V 10A DPAK
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    DigiKey FQD13N10LTM Reel 10,000 2,500
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    FQD13N10LTM Cut Tape 1,514 1
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    FQD13N10LTM Digi-Reel 1
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    Avnet Americas FQD13N10LTM Reel 34 Weeks 5,000
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    FQD13N10LTM Reel 34 Weeks 5,000
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    Mouser Electronics FQD13N10LTM 297,937
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    Verical FQD13N10LTM 2,500 2,500
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    FQD13N10LTM 2,500 2,500
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    FQD13N10LTM 247 24
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    Arrow Electronics FQD13N10LTM 2,500 34 Weeks 2,500
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    FQD13N10LTM Cut Strips 247 34 Weeks 1
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    Newark FQD13N10LTM Cut Tape 10,282 5
    • 1 $0.788
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    FQD13N10LTM Reel 2,500
    • 1 $0.321
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    Onlinecomponents.com FQD13N10LTM 2,500
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    TME FQD13N10LTM 1
    • 1 $0.689
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    Richardson RFPD FQD13N10LTM 5,000
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    Avnet Asia FQD13N10LTM 34 Weeks 5,000
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    Avnet Silica FQD13N10LTM 35 Weeks 2,500
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    Chip1Stop FQD13N10LTM Cut Tape 2,113
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    EBV Elektronik FQD13N10LTM 36 Weeks 2,500
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    Master Electronics FQD13N10LTM 2,500
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    New Advantage Corporation FQD13N10LTM 107,500 1
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    onsemi FQD13N10LTF

    MOSFET N-CH 100V 10A DPAK
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    DigiKey FQD13N10LTF Reel 2,000
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    onsemi FQD13N10LTM_NBEL001

    MOSFET N-CH 100V 10A DPAK
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    DigiKey FQD13N10LTM_NBEL001 Reel 2,500
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    Fairchild Semiconductor Corporation FQD13N10LTM

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    Bristol Electronics FQD13N10LTM 506
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    FQD13N10LTM 421
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    Quest Components FQD13N10LTM 404
    • 1 $0.8625
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    • 100 $0.5175
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    FQD13N10LTM 336
    • 1 $5.55
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    • 100 $3.4225
    • 1000 $3.0525
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    FQD13N10L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQD13N10L Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF
    FQD13N10LTF Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD13N10LTM Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD13N10LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF
    FQD13N10LTM_NBEL001 Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF

    FQD13N10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A


    Original     		PDF FQD13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10L FQU13N10L

    FQU13N10L

    Abstract: FQD13N10L
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L FQU13N10L FQU13N10LTU O-251

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD13N10L FQU13N10L

    fqd13n10l

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10L FQU13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10L FQU13N10L

    FQD13N10L

    Abstract: FQU13N10L
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L May 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L FQD13N10LTF FQD13N10LTM O-252

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08