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    FQD10N20CTM Price and Stock

    onsemi FQD10N20CTM

    MOSFET N-CH 200V 7.8A DPAK
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    Quest Components FQD10N20CTM 512
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    TME FQD10N20CTM 1
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    Chip1Stop FQD10N20CTM Cut Tape 94
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    Flip Electronics FQD10N20CTM 493
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    onsemi FQD10N20CTM_F080

    MOSFET N-CH 200V 7.8A DPAK
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    Fairchild Semiconductor Corporation FQD10N20CTM

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    Bristol Electronics FQD10N20CTM 1,678
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    FQD10N20CTM 1,581
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    FQD10N20CTM 944
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    Quest Components FQD10N20CTM 755
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    FQD10N20CTM 72
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    Win Source Electronics FQD10N20CTM 45,000
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    FQD10N20CTM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD10N20CTM Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQD10N20CTM_F080 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.8A DPAK Original PDF

    FQD10N20CTM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n20c

    Abstract: 10n20
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C swi000 FQD10N20CTF FQD10N20CTM 10n20c 10n20

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Features Description • 7.8 A, 200 V, RDS on = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD10N20C FQU10N20C