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    MOSFET N-CH 500V 9A D2PAK
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    MOSFET N-CH 500V 9A D2PAK
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    FQB9N50CTM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQB9N50CTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 9A D2PAK Original PDF
    FQB9N50CTM Fairchild Semiconductor 500V N-Channel Advance Q-FET C-Series Original PDF

    FQB9N50CTM Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TM FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB9N50C/FQI9N50C FQB9N50C FQB9N50CTM

    Untitled

    Abstract: No abstract text available
    Text: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		PDF FQB9N50C