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    onsemi FQA8N100C

    MOSFET N-CH 1000V 8A TO3PN
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    DigiKey FQA8N100C Tube 495 1
    • 1 $4.26
    • 10 $4.26
    • 100 $2.99867
    • 1000 $2.54175
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    Avnet Americas FQA8N100C Tube 10 Weeks 450
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    FQA8N100C Tube 10 Weeks 450
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    FQA8N100C Tube 10 Weeks 450
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    Mouser Electronics FQA8N100C 11,068
    • 1 $3.45
    • 10 $3.42
    • 100 $2.75
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    Verical FQA8N100C 600 3
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    FQA8N100C 448 3
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    FQA8N100C 330 30
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    Arrow Electronics FQA8N100C 600 10 Weeks 1
    • 1 $4.0214
    • 10 $3.987
    • 100 $3.1675
    • 1000 $2.6882
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    FQA8N100C 448 10 Weeks 1
    • 1 $3.731
    • 10 $3.704
    • 100 $2.827
    • 1000 $2.581
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    FQA8N100C 330 10 Weeks 30
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    • 100 $2.928
    • 1000 $2.485
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    Newark FQA8N100C Bulk 790 1
    • 1 $5.86
    • 10 $5.82
    • 100 $4.44
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    Onlinecomponents.com FQA8N100C
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    TME FQA8N100C 5 1
    • 1 $5.19
    • 10 $4.12
    • 100 $3.71
    • 1000 $3.46
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    Ameya Holding Limited FQA8N100C 20
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    Richardson RFPD FQA8N100C 450
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    Avnet Asia FQA8N100C 10 Weeks 450
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    • 1000 $2.7112
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    Avnet Silica FQA8N100C 120 11 Weeks 30
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    EBV Elektronik FQA8N100C 60 12 Weeks 30
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    New Advantage Corporation FQA8N100C 60 1
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    • 100 $10.3
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    Fairchild Semiconductor Corporation FQA8N100C

    8 A, 1000 V, 1.45 OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components FQA8N100C 4
    • 1 $12.888
    • 10 $9.4512
    • 100 $9.4512
    • 1000 $9.4512
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    ComSIT USA FQA8N100C 68
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    Vyrian FQA8N100C 1,782
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    FQA8N100 Datasheets (1)

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    FQA8N100C Fairchild Semiconductor 1000V N-Channel MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FQA8N100C N-Channel QFET MOSFET 1000 V, 8 A, 1.45 Ω Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA8N100C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		FQA8N100C FQA8N100C PDF

    FQA8N100C

    Abstract: mosfet 1000v 100A 1000V mosfet fqa8n100
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		FQA8N100C FQA8N100C mosfet 1000v 100A 1000V mosfet fqa8n100 PDF

    FQA8N100C

    Abstract: mosfet 1000v 100A 1000V mosfet
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		FQA8N100C FQA8N100C mosfet 1000v 100A 1000V mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA8N00C N-Channel QFET MOSFET 1000 V, 8 A, 1.45 Ω Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA8N00C PDF