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    FQA11N90C_F109 Search Results

    FQA11N90C_F109 Result Highlights (5)

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    R5F109AAKSP#V0G Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
    R5F10968JSP#X0 Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
    R5F1096AKSP#H0 Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
    R5F1096BKSP#X0G Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
    R5F1096DJSP#H0G Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
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    FQA11N90C_F109 Price and Stock

    onsemi FQA11N90C-F109

    MOSFET N-CH 900V 11A TO3P
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    DigiKey FQA11N90C-F109 Tube
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    Newark FQA11N90C-F109 Bulk 450
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    Flip Electronics FQA11N90C-F109 1,800
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    onsemi FQA11N90C_F109

    Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109)
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    Avnet Americas FQA11N90C_F109 Tube 0 Weeks, 2 Days 178
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    Fairchild Semiconductor Corporation FQA11N90C_F109

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    Quest Components FQA11N90C_F109 4
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    FQA11N90C_F109 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQA11N90C_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11A TO-3P Original PDF

    FQA11N90C_F109 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 60 nC) produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    F109

    Abstract: FQA11N90C FQA11N90C_F109
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C F109 FQA11N90C_F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    FQA11N90C

    Abstract: F109 FQA11N90C_F109
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C FQA11N90C F109 FQA11N90C_F109