FQA11N90_F109 Search Results

FQA11N90_F109 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F109AAKSP#V0G		Renesas Electronics Corporation	Microcontrollers with Low Consumption Current for Automotive Applications
R5F10968JSP#X0		Renesas Electronics Corporation	Microcontrollers with Low Consumption Current for Automotive Applications
R5F1096AKSP#H0		Renesas Electronics Corporation	Microcontrollers with Low Consumption Current for Automotive Applications
R5F1096BKSP#X0G		Renesas Electronics Corporation	Microcontrollers with Low Consumption Current for Automotive Applications
R5F1096DJSP#H0G		Renesas Electronics Corporation	Microcontrollers with Low Consumption Current for Automotive Applications

FQA11N90_F109 Price and Stock

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onsemi FQA11N90-F109 MOSFET N-CH 900V 11.4A TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQA11N90-F109	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	FQA11N90-F109					1 $5.24 10 $4.4 100 $3.56 1000 $3.16 10000 $3.16	Get Quote
Avnet Silica	FQA11N90-F109			17 Weeks	900	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FQA11N90-F109			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FQA11N90_F109 Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA11N90-F109)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQA11N90_F109	Tube			450	1 - 10 - 100 - 1000 - 10000 -	Get Quote

FQA11N90_F109 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQA11N90_F109		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 11.4A TO-3P		Original	PDF
FQA11N90_F109		Fairchild Semiconductor	900V N-Channel MOSFET		Original	PDF
FQA11N90-F109		ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11.4A TO-3P		Original	PDF

FQA11N90_F109 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description • 11.4 A, 900 V, RDS on = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 72 nC) stripe and DMOS technology. This advanced MOSFET	Original	FQA11N90	PDF
FQA11N90 Abstract: FQA11N90_F109 F109 Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90 FQA11N90_F109 F109	PDF
Untitled Abstract: No abstract text available Text: FQA11N90 / FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state	Original	FQA11N90	PDF
Untitled Abstract: No abstract text available Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90	PDF
F109 Abstract: FQA11N90 Text: QFET FQA11N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90 FQA11N90 F109	PDF