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    FQA11N90_F109 Search Results

    FQA11N90_F109 Result Highlights (5)

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    R5F109AAKSP#V0G Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
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    FQA11N90_F109 Price and Stock

    onsemi FQA11N90-F109

    MOSFET N-CH 900V 11.4A TO3PN
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    Mouser Electronics FQA11N90-F109
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    Arrow Electronics FQA11N90-F109 274,950 450
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    onsemi FQA11N90_F109

    Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA11N90-F109)
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    FQA11N90_F109 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQA11N90_F109 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 11.4A TO-3P Original PDF
    FQA11N90_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11.4A TO-3P Original PDF

    FQA11N90_F109 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description • 11.4 A, 900 V, RDS on = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 72 nC) stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQA11N90

    FQA11N90

    Abstract: FQA11N90_F109 F109
    Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90 FQA11N90_F109 F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90 / FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQA11N90

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90

    F109

    Abstract: FQA11N90
    Text: QFET FQA11N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90 FQA11N90 F109