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    FOUR LAYER DIODE Search Results

    FOUR LAYER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FOUR LAYER DIODE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NCV7424 Advance Information Four Channel LIN Transceiver NCV7424 is a four channel physical layer device using the Local Interconnect Network LIN protocol. It allows interfacing of four independent LIN physical buses and the LIN protocol controllers. The


    Original     		PDF NCV7424 NCV7424 J2602 NCV7321-1 TS16949 TSSOP16 NCV7424/D

    Untitled

    Abstract: No abstract text available
    Text: NCV7424 Four Channel LIN Transceiver NCV7424 is a four channel physical layer device using the Local Interconnect Network LIN protocol. It allows interfacing of four independent LIN physical buses and the LIN protocol controllers. The device is compliant to LIN 2.x Protocol Specification package and the


    Original     		PDF NCV7424 NCV7424 J2602 NCV7321-1 TS16949 TSSOP16 NCV7424/D

    24A0 marking

    Abstract: No abstract text available
    Text: NCV7424 Four Channel LIN Transceiver NCV7424 is a four channel physical layer device using the Local Interconnect Network LIN protocol. It allows interfacing of four independent LIN physical buses and the LIN protocol controllers. The device is compliant to LIN 2.x Protocol Specification package and the


    Original     		PDF NCV7424 NCV7424 J2602 NCV7321-1 TS16949 TSSOP16 NCV7424/D 24A0 marking

    NTE6404

    Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
    Text: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts


    Original     		PDF NTE6404 NTE6404 175mA four-layer diode Silicon unilateral switch four layer diode SCR 30v

    Untitled

    Abstract: No abstract text available
    Text: SiBOD application notes The SiBOD™ series of protectors is a four layer thyristor based protector designed specifically for telecommunications applications. It has greater capacity for diverting surge currents when compared to an avalanche T.V.S. device.


    Original     		PDF

    triac spice model

    Abstract: SPICE thyristor model IL410 spice model schematic diagram for thyristor controls heater phototriac Spice reed relay spice model various PWM techniques for triac TRIAC RCA phototriac design solutions Phototriac zero voltage crossing
    Text: Vishay Semiconductors PHOTOTRIAC Design Solutions Basic TRIAC Characteristics A TRIAC is a subset of a family of semiconductors referred to as thyristors. These are all four-layer bipolar devices with various triggering configurations. Regardless of the specific flavor of thyristor used,


    Original     		PDF 08-Nov-04 triac spice model SPICE thyristor model IL410 spice model schematic diagram for thyristor controls heater phototriac Spice reed relay spice model various PWM techniques for triac TRIAC RCA phototriac design solutions Phototriac zero voltage crossing

    "network interface cards"

    Abstract: conexant lan
    Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. RS825x ATM Physical Interface PHY Devices The RS825x is a family of four 155 Mbps (OC-3/STM-1) ATM-SONET Physical Layer


    Original     		PDF RS825x RS825x 53-byte "network interface cards" conexant lan

    conexant c29

    Abstract: No abstract text available
    Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. RS825x ATM Physical Interface PHY Devices The RS825x is a family of four 155 Mbps (OC-3/STM-1) ATM-SONET Physical Layer


    Original     		PDF RS825x RS825x 53-byte conexant c29

    Untitled

    Abstract: No abstract text available
    Text: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3837 Current15m StyleDO-204AA NumberTY00200003

    shockley diode

    Abstract: No abstract text available
    Text: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772

    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84

    UJT 2N2646 specification

    Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE

    UJT 2N2646 specification

    Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1

    thyristor T10

    Abstract: thyristor T10-25
    Text: T10 applicatio o t e s The T10 series of protectors is a four layer thyristor based protector designed specifically for telecommunications applications. It has greater capacity for diverting surge currents, when compared to an avalanche T.V.S. device. IHM


    OCR Scan     		PDF

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    ujt transistor 2n2160

    Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits

    shockley diode

    Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
    Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)


    OCR Scan     		PDF IN3831 IN3846 IN3832 IK3833 IN3834 IK3835 IN3836 IN3837 IN3838 shockley diode diode shockley shockley 1n3842 shockley diode 1N3842

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Text: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan     		PDF 20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987