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    FORVARD VOLTAGE 0.2 V Search Results

    FORVARD VOLTAGE 0.2 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4SL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2S5.6FS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Unidirectional, 3.5 V, SOD-923 Visit Toshiba Electronic Devices & Storage Corporation

    FORVARD VOLTAGE 0.2 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LT1K92A

    Abstract: No abstract text available
    Text: 11/01 1 ! :09 P. 02/33 . . .:. ‘2 ‘“””’ ; ~ ‘3 /3 ~~~ ., SflARP CORPORATION TECIINICAL LITERATURE FOR GaP/CaP Green chip LED Device MODEL NO. LT1K92A DOC. NO. DG- 94X107 DATE Oct. 31. 1994 1. These technical literature sheets include the contents under the copyright of


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    LT1K92A 94X107 LT1K92A PDF

    TLR4093A

    Abstract: TLR4243 TLK4093A TLR40 TLR2098A TLR4093
    Text: TO SHIBA {D IS C R E T E /O P T O } 9097250 TO S H IB A TT D IS C R E T E /O P T O j > ì f | T E H 725Q 99D 17250 0D 175S0 b D T -4 I-3 3 TLR2098A, TLR4093A TLR2248, TLR4243 RED COLOR 4 DIGITS LED DISPLAY • For Duplex drive connection« and available both polarity coamon anode or c o a o a


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    175S0 TLR2098A, TLR4093A TLR2248, TLR4243 TLR4243 TLK4093A TLR40 TLR2098A TLR4093 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGL30N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @ Tc=100°C * High S peed Switching * Low Saturation V olatge : V CE sat = 2 .0 V @ lc=30A * High Input Im pedance * C O -P A K , IG B T with F R D : Trr = 50n S (Typ) APPLICATIONS *


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    SGL30N60RUFD PDF

    TFK u 269

    Abstract: tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode
    Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications


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    2SK1917-MR SC-67 TFK u 269 tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode PDF

    str f 6467

    Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151
    Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications


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    2SK1917-MR SC-67 IZHTS3033-t str f 6467 STR 6467 2SK191 9vtfr 2SK1917-MR T151 PDF

    2SK2806-01

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01


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    2SK2806-01 0257-fi-004a To-220 0257-R-003a 0257-R-003a 2SK2806-01 PDF

    b175

    Abstract: 4h4 1 2SK2806-01 TL 003a
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2806-01 : SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE DRAWN' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I/. Y 0257-R-004a I_


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    2SK2806-01 0257-fi-004a To-220 0257-R-003a 0257-R-003a b175 4h4 1 2SK2806-01 TL 003a PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C D E | t.ME7SSS DDllllI fi | “ y- ^ $ - 2 5 ELECTRONICS INC Tfi F R S L Î M I M A R Y SPECIFICATION MO S F I E L D E F F E C T POWES TRANS I STO ~ E S T ?.ú'¿ : ev:cú ^ P À 1 5 7 0 H FAST SWITCHING N - C H A N N E L S I L I C O N P O W E R MO S F E T . A R R A Y


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    b427S55 PDF

    2sk 100a

    Abstract: HH1T 2SK1509 T151 A2221
    Text: 2SK1509 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I I Features S E R I E S Outline Drawings 1Hiç h current 1Low no-resistanoe No secondary breakdown 1Low driving power Hich forward Transconductance I Applications 1Me tor controllers Ge îaral purpose power amplifier


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    2SK1509 O-22QAB SC-46 2sk 100a HH1T 2SK1509 T151 A2221 PDF