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    2SK1509 Search Results

    2SK1509 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1509 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1509 Collmer Semiconductor MOSFET Scan PDF
    2SK1509 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1509 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF

    2SK1509 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SK1509 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features - I I I S E R I E S I Outline Drawings • High current • Low no-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■ Applications


    OCR Scan     		PDF 2SK1509

    K1509

    Abstract: A2221
    Text: 2SK1509 FU JI P O W E R M O S - F E T N-CNANNEL SILICON POWER MOS-FET _ - F - I I I • Filatures ¥¥T S E R I E S IOutline Drawings • Hiç h current • Low no-resistance • No secondary breakdown • Low driving power


    OCR Scan     		PDF 2SK1509 K1509 A2221

    2sk 100a

    Abstract: HH1T 2SK1509 T151 A2221
    Text: 2SK1509 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I I Features S E R I E S Outline Drawings 1Hiç h current 1Low no-resistanoe No secondary breakdown 1Low driving power Hich forward Transconductance I Applications 1Me tor controllers Ge îaral purpose power amplifier


    OCR Scan     		PDF 2SK1509 O-22QAB SC-46 2sk 100a HH1T 2SK1509 T151 A2221

    SIPMOS

    Abstract: 2SK1509
    Text: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce


    OCR Scan     		PDF 2SK1509 03j6T O-22QAB SC-46 SIPMOS

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors

    2SK1506 22

    Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan     		PDF 2SK1822-01M T0220F15 2SK1823-01 t03pf 2SK1969-01 2SK1818M 2SK1979 2SK1276 2SK1506 22 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M

    k1507

    Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
    Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1081 2SK956-01 2SK1385-01 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 k1507 K1507 MOSFET 90T03P 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084

    2SK1969-01

    Abstract: No abstract text available
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan     		PDF 2SK1822-01M 2SK1823-01 2SK1969-01 T0220F15 T03PF 2SK1505M 2SK2048 2SK1388 2SK1083M 2SK1096M

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


    OCR Scan     		PDF T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05

    2SK1661

    Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
    Text: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1661 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821