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Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

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Microchip Technology Inc 2N1613A Bipolar Transistors - BJT NPN Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N1613A					1 - 10 - 100 $17.49 1000 $17.49 10000 $17.49	Buy Now
Microchip Technology Inc 2N3442 Bipolar Transistors - BJT NPN Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N3442					1 - 10 - 100 $35.24 1000 $35.24 10000 $35.24	Buy Now
Microchip Technology Inc JANS2N2920U Bipolar Transistors - BJT NPN Dual Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANS2N2920U					1 - 10 - 100 $140.16 1000 $140.16 10000 $140.16	Buy Now
Microchip Technology Inc 2N3584 Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N3584					1 - 10 - 100 $33.37 1000 $33.37 10000 $33.37	Buy Now
Microchip Technology Inc JANTXV2N2219A Bipolar Transistors - BJT BJTs, Through Hole - TO-39-3, Single configuration.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANTXV2N2219A					1 - 10 $8.43 100 $7.24 1000 $6.77 10000 $6.77	Buy Now

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FOR TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sp8m3 Abstract: RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k Text: Products for Automotive Electronic Equipment RECOMMENDED DEVICES For Power supply / DC/DC converter / Various types of motors For Relay / Motor drive Transistors for solenoid motor drive Ultra-low ohmic chip resistors for current detection DTDG14GP , DTDG23YP , 2SD2143 , QSH29	Original	DTDG14GP DTDG23YP 2SD2143 QSH29 DTDG23YP DTDG14GP 2SD2143 QSH29 2SB1260 sp8m3 RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k	PDF
STA471A Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors	Original	2SA1725/2SC4511 15max. STA471A pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent	PDF
transistor Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors	Original		PDF
Untitled Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007	PDF
NPTB00050B Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B	PDF
Untitled Abstract: No abstract text available Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz	Original	BFP410 AEC-Q101 OT343	PDF
Dupline Abstract: ELEVATOR CONTROL pcb dupline 128 power line carrier communication dc G21305511 carlo gavazzi module Carlo Gavazzi CHANNEL GENERATOR ELEVATOR dc-power-supply dc power carrier communication Text: Du line Output-Module for Elevators Type G 2130 55.1 700 Fieldbus Installationbus • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline® carrier	Original		PDF
TIM202 Abstract: No abstract text available Text: TIM 10, 20, 40 Vishay Aztronic Pulse Transformers for General Use FEATURES • These micro transformers are designed for pulse transmission for frequencies up to 300kHz • They are used for signal synchronization, power supplies and transistor control • Available taped and reeled which allows automatic pick	Original	300kHz 200mA 300kHz 1000VRMS 50200mA 100mA 400mA TIM202	PDF
Untitled Abstract: No abstract text available Text: Dupline Field- and Installationbus Output-Module for Elevators Type G 2130 55.1 700 • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline carrier	Original	G2196	PDF
transistor TO220 Abstract: transistor TO-3P TO3-P M1847 m175 all type transistor to3p Text: Transistor Holders-1 for TO-220 ＊Use for IT related equipment or other applications ＊Our Variations are used for TO-220 type and TO-3P type transistor ＊Available for any custom order P2187 OPTICAL FIBER 光ケーブルコネクター M1922 With heatsink	Original	P2187 M1922 M1761 M1744 M1847 M1728 M1748 M1927 transistor TO220 transistor TO-3P TO3-P m175 all type transistor to3p	PDF
depletion 400V power mosfet Abstract: P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet Text: AN-D27 Application Note DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efﬁcient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the basis for their design-ins. High breakdown	Original	AN-D27 depletion 400V power mosfet P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet	PDF
4126L Abstract: 4126 Text: UTC 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed	Original	110VAC O-126 4126L QW-R204-021 4126L 4126	PDF
Untitled Abstract: No abstract text available Text: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed	Original	110VAC O-126 4128L QW-R204-020	PDF
Untitled Abstract: No abstract text available Text: TB6559FG TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6559FG Full-Bridge Driver IC for DC motor TB6559FG is a full-bridge driver IC for DC motor which uses LDMOS for output transistors. It adopts MOS processes for upper Pch and lower Nch transistors, and introduces a constant-current or direct	Original	TB6559FG TB6559FG TB6559F	PDF

bfp410 Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package	Original	BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB	PDF
Untitled Abstract: No abstract text available Text: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed	Original	110VAC O-126 4128L QW-R204-020	PDF
Untitled Abstract: No abstract text available Text: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment	Original	BD159G BD159/D	PDF
BD159 Abstract: BD159G Text: BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line−Operated Equipment	Original	BD159 BD159/D BD159 BD159G	PDF
Untitled Abstract: No abstract text available Text: BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line−Operated Equipment	Original	BD159 BD159/D	PDF
SE012 Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)	Original	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611	PDF
Untitled Abstract: No abstract text available Text: NPN Silicon RF Transistor BF 771 • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type M arking O rdering code for versions on 8 mm-tape Package BF 771 R3 Q62702-F990 SOT 23	OCR Scan	Q62702-F990	PDF
vibrator detector Abstract: 251C VQFP48 Text: Flower M ana g em ent LSI for C ellu lar phones BD6Q21 KV •Description The BD6021 KV is a power management LSi for cellular phones. 6-channel CMOS type regulators, 4-channel detectors, a driver for vibrator, 4-channel NMOS transistors for switch, an inverting power supply	OCR Scan	BD6021 22S-6452 ei62-715 vibrator detector 251C VQFP48	PDF
SAW MARKING CODE SOT-23 Abstract: No abstract text available Text: NPN Silicon RF Transistor • • BF 799 Suitable for broadband RF amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape	OCR Scan	Q62702-F788 Q62702-F935 SAW MARKING CODE SOT-23	PDF
transistor marking 2A H Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.	OCR Scan	2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108	PDF

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FOR TRANSISTOR Search Results

FOR TRANSISTOR Result Highlights (5)

FOR TRANSISTOR Price and Stock

Microchip Technology Inc 2N1613A

Microchip Technology Inc 2N3442

Microchip Technology Inc JANS2N2920U

Microchip Technology Inc 2N3584

Microchip Technology Inc JANTXV2N2219A

FOR TRANSISTOR Datasheets Context Search

sp8m3

STA471A

transistor

Untitled

NPTB00050B

Untitled

Dupline

TIM202

Untitled

transistor TO220

depletion 400V power mosfet

4126L

Untitled

Untitled

bfp410

Untitled

Untitled

BD159

Untitled

SE012

Untitled

vibrator detector

SAW MARKING CODE SOT-23

transistor marking 2A H