Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3PN Non Isolated Leaded Plastic Package Package Outline, Packaging and Handling Information TO3PN_Pkg_Drawing Rev041105 Continental Device India Limited Data Sheet
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Rev041105
C-120
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Untitled
Abstract: No abstract text available
Text: FastRecover yDi ode T wi n OUTLI NE D20LC20U Uni tmm Package I TO3P 3pi n 15.0 200V20A 5.5 管理番号 （例） Control No. U 品名 Type No. 0000 22.0 ロット記号 （例） Date code D20LC20 ~ + ∼ 1.4 極性 Polarity 18.0 Feat ur e Ful lMol ded
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D20LC20
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CTB34M
Abstract: fmlg12 CTB-34M marking RBV Marking code 6H SSB14 RK44 marking A63 SFPB-64 MARKING band color code
Text: Marking Guide 6 TO3P Type • 1 Small TMD ■ M A ① 9 D ④ ② ③ ①Type No. abbreviation The AM01 Type No. is indicated as “M.” ②Class Z: 200V None: 400V A: 600V B: 800V C: 1000V ③Manufacturing date First character: Year (Last digit of year)
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200VNone:
400VA:
800VC:
CTB34M
CTB34.
CTB34M
FMU12S
FMU12S.
FMU12S
FMLG12
fmlg12
CTB-34M
marking RBV
Marking code 6H
SSB14
RK44
marking A63
SFPB-64
MARKING band color code
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Silicon NPN Darlington transistor
Abstract: No abstract text available
Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE214
NTE214
500IB1
500IB2
Silicon NPN Darlington transistor
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fkp280a
Abstract: FKP280 SANKEN sanken power transistor B105 CF35 T02-001EA-050912 ha 2005 fet t02 "Sanken Electric"
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
fkp280a
FKP280
SANKEN
sanken power transistor
B105
CF35
T02-001EA-050912
ha 2005
fet t02
"Sanken Electric"
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Untitled
Abstract: No abstract text available
Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage
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NTE2669
NTE2669
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T02-001EA-050912
Abstract: fkp280a
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
T02-001EA-050912
fkp280a
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T02-001EA-050912
Abstract: No abstract text available
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
T02-001EA-050912
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voltage regulator 24v 2a
Abstract: NTE116 NTE1940
Text: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built–in Current Foldback Protection
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NTE1940
NTE116.
voltage regulator 24v 2a
NTE116
NTE1940
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Untitled
Abstract: No abstract text available
Text: FT4018.P INSULATED STANDARD TRIAC On-State Current 40 Amp INSULATED TO3P Gate Trigger Current £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V 1 2 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P
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FT4018
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jst41
Abstract: No abstract text available
Text: FT4018.P INSULATED STANDARD TRIAC On-State Current 40 Amp INSULATED TO3P Gate Trigger Current £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P
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FT4018
jst41
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nte37
Abstract: NTE37MCP NTE36
Text: NTE36 NPN & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications.
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NTE36
NTE37
10IB1
10IB2
nte37
NTE37MCP
NTE36
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NTE116
Abstract: NTE1940
Text: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built−in Current Foldback Protection
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NTE1940
NTE116.
NTE116
NTE1940
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NTE2314
Abstract: No abstract text available
Text: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
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NTE2304
NTE2314)
NTE2304
10IB1
10IB2
NTE2314
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npn 24a
Abstract: vce 500v NPN Transistor npn high voltage transistor 500v 8a NTE2596
Text: NTE2596 Silicon NPN Transistor High Voltage, High Current Switch TO3PBL Type Package Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
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NTE2596
npn 24a
vce 500v NPN Transistor
npn high voltage transistor 500v 8a
NTE2596
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11W60C3
Abstract: No abstract text available
Text: PowerMOSFET OUTLI NE FP11W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V11A 22 管理番号 （例） Control No. 品名 Type No. 0000 11W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S
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11W60C3
11W60C3
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NPN VCEO 800V
Abstract: NTE2533 NPN Transistor 1500V 20a
Text: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2533
100ns
100mA,
NPN VCEO 800V
NTE2533
NPN Transistor 1500V 20a
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Untitled
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n •外観図 D25SC6M OUTLI NE Package：I TO3P pi n） （3 t ：mm Uni 15.0 60V25A 5.5 特 長 管理番号 （例） Control No. 煙フルモールド 煙高速スイッチング 煙低 VF 品名 Type No. 0000 D25SC6M ~ + ∼
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D25SC6M
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Untitled
Abstract: No abstract text available
Text: NTE2637 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching TO3P Full Pack Features: D High Breakdown Voltage Capability D Fully Insulated Package for Easy Mounting D Low Saturation Voltage D High Switching Speed Applications: D Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors
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NTE2637
15625Hz,
31250Hz,
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Untitled
Abstract: No abstract text available
Text: NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch TO3P Full Pack Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2642
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Untitled
Abstract: No abstract text available
Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2676
100mA,
75kHz
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Untitled
Abstract: No abstract text available
Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and
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NTE2969
NTE2969
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sanken
Abstract: Sanken 2011 ISD50A
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC ＭＬＤ６８５Ｄ Features Package MT100 z z Feb. 2011 TO3P Low on-state resistance Built-in gate protection diode Applications z z Electric power steering High current switching Key Specifications z z V(BR)DSS=60V (ID=100 A)
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MT100
PW100sec.
sanken
Sanken 2011
ISD50A
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FMXA-4203S
Abstract: 4203S FMX-33S sanken lot number FMXA4203 B105 CF35 SANKEN power supply A18T FMX33S
Text: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.
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FMXA-4203S
D01-004EA-051128
FMXA-4203S
4203S
FMX-33S
sanken lot number
FMXA4203
B105
CF35
SANKEN power supply
A18T
FMX33S
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