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    FOR SECOND TEAR Search Results

    FOR SECOND TEAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    FOR SECOND TEAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F010

    Abstract: M28F010 M28F010-12 M28F010-90 M80C186
    Text: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption


    Original     		PDF M28F010 1024K M28F010 ER-20 ER-24 28F010 M28F010-12 M28F010-90 M80C186

    7805H

    Abstract: epson dot matrix printer TL7702ACP
    Text: Issued March 1999 232-3872 Data Pack F Panel printer Data Sheet RS stock no. 260-139 Specifications Standard Number of columns 24 Print speed lines per second - typical 0.7 Character set (mm) - W ϫ H 1.7 ϫ 2.4 Dots per line (graphics) 144 5 ϫ 7 (5 ϫ 8 for


    Original     		PDF 100mA 7805H epson dot matrix printer TL7702ACP

    CRC16

    Abstract: CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490
    Text: Maxim > App Notes > 1-Wire Devices Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in iButton® Applications


    Original     		PDF DS1993: DS1995: DS1996: com/an159 AN159, APP159, Appnote159, CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490

    DS1991

    Abstract: DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990
    Text: Maxim > App Notes > 1-Wire DEVICES Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 Revised: Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in


    Original     		PDF DS1973: DS1977: DS1982: DS1985: DS1986: DS1990A: DS1992: DS1993: DS1995: DS1996: DS1991 DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990

    Untitled

    Abstract: No abstract text available
    Text: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		PDF 1500R E1269

    ASTM d792

    Abstract: astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374
    Text: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R • Thermal conductivity = 1.5 W/mK • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		PDF 1500R D2240 ASTM d792 astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374

    Untitled

    Abstract: No abstract text available
    Text: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		PDF 1500R E1269

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N

    Untitled

    Abstract: No abstract text available
    Text: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing


    OCR Scan     		PDF 1024K M28F010 ER-20, ER-24, 28F010 RR-60, AP-316,

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		PDF 28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010

    Untitled

    Abstract: No abstract text available
    Text: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller


    OCR Scan     		PDF 28F256A ER-20, ER-24, RR-60, AP-316, AP-325,

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		PDF 28F020 2048K AP-325 -80V05, -80V05 28F020

    intel 28f512

    Abstract: 28F512 80C166 80C186 P28F512
    Text: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for


    OCR Scan     		PDF 28F512 intel 28f512 28F512 80C166 80C186 P28F512

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325

    Untitled

    Abstract: No abstract text available
    Text: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase


    OCR Scan     		PDF A28F256A 32-Lead A28F256A AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316,

    28F010-120

    Abstract: 28f010
    Text: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120

    P28F256A-150

    Abstract: F256A intel 28f256a
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Qulck-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		PDF 28F256A 32-LEAD P28F256A-120 P28F256A-150 F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, P28F256A-150 F256A intel 28f256a

    Untitled

    Abstract: No abstract text available
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for


    OCR Scan     		PDF A28F010 1024K 32-LE AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316,

    Untitled

    Abstract: No abstract text available
    Text: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program


    OCR Scan     		PDF 28F256A Cu56A-150 150f1* F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325,

    tegra t30

    Abstract: No abstract text available
    Text: ¡n tg l 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 ¡j,s Typical Byte-Program


    OCR Scan     		PDF 1024K 28F010 AP-325 28F010-65 28F010-90 405bl tegra t30

    28F256A200

    Abstract: order 231369 29024
    Text: « y « « in t e i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P ro g ra m m in g T M Algorithm


    OCR Scan     		PDF 28F256A 28F256A 32-PIN 32-LEAD N28F256A-120 N28F256A-150 N28F256A-200 P28F256A-120 P2BF256A-150 P28F256A-200 28F256A200 order 231369 29024

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program


    OCR Scan     		PDF 28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28,

    271111

    Abstract: No abstract text available
    Text: in te i P ftiO M flN A H V M28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m in g Algorithm


    OCR Scan     		PDF M28F010 1024K M28F010 271111