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    FMR23N60ES

    Abstract: fmr23n60e Schematics 5250 1-56mH
    Text: FMR23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMR23N60ES FMR23N60ES fmr23n60e Schematics 5250 1-56mH

    fmr23n60e

    Abstract: No abstract text available
    Text: FMR23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMR23N60E fmr23n60e

    23N60

    Abstract: 23N60E
    Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    PDF FMR23N60E MS5F6930 H04-004-05 H04-004-03 23N60 23N60E

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


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    PDF O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


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    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    23N60ES

    Abstract: 23N60
    Text: DATE CHECKED Sep.-25-'08 CHECKED Sep.-25-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original
    PDF FMR23N60ES MS5F7209 H04-004-05 H04-004-03 23N60ES 23N60

    23N60E

    Abstract: No abstract text available
    Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    PDF MS5F6930 FMR23N60E H04-004-05 H04-004-03 23N60E