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    FLU35ZME1 Search Results

    FLU35ZME1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLU35ZM-E1 Fujitsu Original PDF

    FLU35ZME1 Datasheets Context Search

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    101S12

    Abstract: FLU35ZME1
    Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE


    Original     		PDF FLU35ZME1 FLU35ZME1 25deg 101S12

    Untitled

    Abstract: No abstract text available
    Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm typ. High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product


    Original     		PDF FLU35ZME1 FLU35ZME1 25deg

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME