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    D431000AGZ

    Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
    Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is


    Original     		PDF PD431000A ThepPD431000A 576bits vPD431OOOA uPD431OOOA 32-pin yPD431232L 013io D431000AGZ d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T

    Untitled

    Abstract: No abstract text available
    Text: Oct üo - m NEC ELECTRON DEVICE , D A T A S I - Ï I E Ü S T MOS // P D 4 IN T E G R A T E D CIRCUIT 3 1 0 0 0 A F 1M-BIT CMOS STATIC RAM DESCRIPTION The <iD 431000A(F) Is a high speed. Jo * ixw er, 128X words by 8 b i t s CMOS s t a t i c BAM fcbric&t-od- -


    OCR Scan     		PDF 31000A flPD431000A 50ifA 60258P

    d431000a

    Abstract: d0321 J-131 3A11 A12C HPD431000A JIPD431000A PPD431000A ZZ1V04 L1122
    Text: E C ELECTRONICS INC M 3ñE D • bMS7S2S □03214=1 S ■ NECE JUPD431000A 131,072 x 8 -B it . Static CMOS RAM -ß w NEC Electronics Inc. ■ ' Description . Pin Configurations The pPD431000A is a 131,072-ward by 8-bit static RAM fabricated with advanced siiicon-gate technology;


    OCR Scan     		PDF UPD431000A pPD431000A 072-ward the/uPD431000A juPD431000A 32-pln 32-pin 427S2S DD321Sb d431000a d0321 J-131 3A11 A12C HPD431000A JIPD431000A ZZ1V04 L1122