Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLC097WF Search Results

    SF Impression Pixel

    FLC097WF Price and Stock

    SUMITOMO ELECTRIC Device Innovations Inc FLC097WF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FLC097WF 11
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FUJITSU Limited FLC097WF

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLC097WF 4
    • 1 $67.2
    • 10 $63.84
    • 100 $63.84
    • 1000 $63.84
    • 10000 $63.84
    		Buy Now

    FLC097WF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC097WF Fujitsu C-Band Power GaAs FET Original PDF
    FLC097WF-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF

    FLC097WF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general


    Original     		PDF FLC097WF FLC097WF

    power dissipation fet 400W

    Abstract: No abstract text available
    Text: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general


    Original     		PDF FLC097WF FLC097WF FCSI0598M200 power dissipation fet 400W

    FLC097WF

    Abstract: No abstract text available
    Text: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general


    Original     		PDF FLC097WF FLC097WF

    FLC097WF

    Abstract: No abstract text available
    Text: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general


    Original     		PDF FLC097WF FLC097WF FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general


    Original     		PDF FLC097WF FLC097WF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    Untitled

    Abstract: No abstract text available
    Text: FLC097WF - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 28.8dBm Typ. High Gain: G ^ b = 8.5dB(Typ.) High PAE: riadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package


    OCR Scan     		PDF FLC097WF FLC097WF FCSI0598M200