UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE
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CP005-1E
AS7C1024-12JC
AS7C1024-12PC
AS7C1024-12TJC
AS7C1024-12TPC
AS7C1024-15JC
AS7C1024-15PC
AS7C1024-15TJC
AS7C1024-15TPC
AS7C1024-20JC
UM61256AK-15
UM61256ak sram
um61256ck-20
HY62256ALP10
XL93LC46AP
w24m257
GVT7164D32Q-6
km62256blg-7
w24m257ak-15
UM61256
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intel 80c186
Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read
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28F020
2048K
32-Pin
32-Lead
ER-28
AP-316
AP-325
ER-20
-80V05
intel 80c186
F28F020-90
N28F020-150
28F020
E28F020-150
N28F020-90
80C186
A80C186
intel 28F020
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28F020
Abstract: 80C186 80c186 specification update
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read
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28F020
2048K
32-Pin
32-Lead
AP-325
ER-20
-80V05
28F020
80C186
80c186 specification update
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TN28F020-150
Abstract: 28F020 80C186 intel 28F020
Text: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP
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28F020
2048K
32-Lead
E28F020-90
N28F020-90
E28F020-120
N28F020-120
E28F020-150
N28F020-150
TN28F020-150
80C186
intel 28F020
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29F020
Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase 1-Mbit: 1 Second Typical Chip-Erase 2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 µs Typical Byte-Program 1-Mbit: 1 Second Chip-Program
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28F010
28F020
32-Lead
P28F010-90
P28F010-120
P28F010-150
TN28F010-90
TN28F010-120
TN28F010-150
TP28F010-90
29F020
28F020
TN28F010
intel 28F010
N28F010-120
N28F020-150
80C186
E28F010
N28F010
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M25P08
Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010
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SST39SF512;
SST29EE512
AM28F512
M29F512
AT49F512,
AT29C512
W29EE512
SST39SF010;
SST29EE010
AM29F010,
M25P08
MD2800-D08
pmc flash pm49fl004t-33jc
MD2810-D08
m25p04
SDTB-128
MD2811-D32-V3
M25P08-V-MN-6-T
Sandisk TSOP
EPROM databook am27c256 120
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PLCC pin configuration
Abstract: 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket
Text: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option
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FlashIC-56TS-44D-B6-YAM-S
CIC-56TS-44D-C6-YAM-S
CIC-56TS-48D-A6-YAM-S
CIC-56TS-40D-D6-YAM-S
CIC-56TS-48D-B6-YAM-S
CIC-56TS-40D-E6-YAM-S
CIC-44PS-40D-A6-YAM
PLCC pin configuration
40d capacitor
48 tsop flash pinout
tsop 48 PIN SOCKET
CIC-44PS-44D-A6-YAM
psop 44 of PA28F008SA
transistor A6 datasheet
transistor a6 s
48TS-40D-A6-WEL-S
TSOP 56 socket
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48 tsop flash pinout
Abstract: F28F020 48TS-40D-A6-WEL-S E28F010 E28F020 F28F010 N28F010 N28F020 TSOP dip adapter TSOP 48 socket
Text: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option
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29F020
Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface
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OCR Scan
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PDF
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28F010
28F020
32-Pin
32-Lead
E28F010-90
N28F010-90
E28F010-120
E28F010-150
TE28F010-90
29F020
28F020
80C186
E28F010
N28F010
P28F010
29020
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IN6AG
Abstract: 28F020 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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OCR Scan
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PDF
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28F020
2048K
32-Pin
32-LEAD
P28F020-70
N28F020-70
P28F020-90
IN6AG
intel 28F020
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P28F020-150
Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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OCR Scan
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PDF
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28F020
2048K
ER-20,
ER-24,
ER-28,
RR-60,
AP-316,
AP-325
-80V05,
-80V05
P28F020-150
28F020
80C186
E28F020
F28F020
intel 28F020
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n28f020-150
Abstract: No abstract text available
Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read
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OCR Scan
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PDF
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28F020
2048K
-80V05,
-80V05
n28f020-150
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Untitled
Abstract: No abstract text available
Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp
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OCR Scan
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PDF
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28F020
2048K
32-Lead
E28F020-90
E28F020-120
E28F020-150
TE28F020-90
TE28F020-120
TE28F020-150
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i80C186
Abstract: M28F020 29024
Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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OCR Scan
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PDF
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28F020
2048K
32-Pin
32-Lead
-32-Lead
-80V05,
-80V05
AP-325
i80C186
M28F020
29024
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intel eprom Intelligent algorithm
Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
Text: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read
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OCR Scan
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PDF
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28F020
2048K
28F020
AP-316
AP-325
-80V05,
-80V05
intel eprom Intelligent algorithm
32-PIN
E28F020
F28F020
N28F020
P28F020
intel 28F020
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Untitled
Abstract: No abstract text available
Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for
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OCR Scan
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PDF
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28F020
2048K
AP-325
-80V05,
-80V05
28F020
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Untitled
Abstract: No abstract text available
Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read
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OCR Scan
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PDF
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28F020
2048K
32-Pin
32-Lead
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SSC16E
Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program
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OCR Scan
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PDF
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28F020
2048K
28F020
32-PIN
32-LEAD
P28F020-150
N28F020-150
P28F020-200
SSC16E
N28F020-200
28F020-150
29024
intel 28F020
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Untitled
Abstract: No abstract text available
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program
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OCR Scan
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PDF
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28F020
2048K
ER-20,
ER-24,
AP-316,
AP-325
-80V05,
RR-60,
ER-28,
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28F020T
Abstract: intel 28F020
Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 pS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles a 12.0 V ±5% V pp ■ High-Performance Read
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OCR Scan
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PDF
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28F020
2048K
E28F020-90
N28F020-90
E28F020-120
N28F020-120
E28FQ20-150
N28F020-150
TE28F02Q-90
TE28F020-120
28F020T
intel 28F020
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Untitled
Abstract: No abstract text available
Text: in t e i, ÌSM002FLKA 2 MBYTE 1024K x 16 CMOS FLASH SIMM • High-Performance — 150 ns Maximum Access Time — 13.3 MB/s Read Transfer Rate ■ 10,000 Rewrite Cycles Minimum/ Component ■ Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ 16 fis Typical Word Write
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OCR Scan
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PDF
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SM002FLKA
1024K
80-Pin
ISM002FLKA
150nt
SM002FLKA-150
ER-20,
ER-24,
28F020
RR-60,
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intel 28F020
Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
Text: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program
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OCR Scan
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PDF
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007L5<
2048K
Nonvol020-200
F28F020-150
F28F020-200
TE28F020-90
TF28F020-90
TE28F020-150
TF28F020-150
ER-20,
intel 28F020
flash n28f020
p28f020
28F020
E28F020
F28F020
intel PLD
29024
28f020-150
D28F020
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28f020-150
Abstract: 28F020-200 intel 28F020
Text: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical
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OCR Scan
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PDF
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28F020
2048K
TE28F020-150
TF28F020-150
TE28F020-90
TF28F020-90
ER-20,
ER-24,
ER-28,
RR-60,
28f020-150
28F020-200
intel 28F020
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Untitled
Abstract: No abstract text available
Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■
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OCR Scan
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PDF
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28F020
2048K
32-Pin
-80V05,
-80V05
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