Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FK35V2732 Search Results

    FK35V2732 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 12.7— 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MG FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK35V2732 FK35V2732

    ld12a

    Abstract: s parameters MGFK35V2732 p channel j fet s/ksmh12/2.27/30/GA100SIPC12
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 5 V 27 32 1 2 . 7 — 1 3 .2 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION The M G FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK35V2732 MGFK35V2732 95GHz ld12a s parameters p channel j fet s/ksmh12/2.27/30/GA100SIPC12

    FK35V

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 1 2 . 7 - 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK35V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFK35V2732 FK35V