Wavecom wmoi3
Abstract: wmoi3 gsm modem circuit gsm modem sim 900 Wavecom wavecom GSM wmoi3 wavecom GSM Modem medl Alla antenne
Text: Information från Intectra AB. Sikom GSM Fixi, fjärrstyrd strömbrytare via GSM-nätet. • Kräver ingen fast teleanslutning. GSM nätet används för att förmedla fjärrstyrningen. • Enkel att montera. GSM Fixi är kapslad i en s.k. DIN-kapsling för enkelt montage i t.ex. en elcentral.
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GS-33,
72x90x58
52x90x58
220VAC
S-611
Wavecom wmoi3
wmoi3
gsm modem circuit
gsm modem sim 900
Wavecom
wavecom GSM wmoi3
wavecom GSM Modem
medl
Alla
antenne
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0C72
Abstract: THEFT CSR BC5 BC5 CSR rc21 series bc6 csr block 106416 ccd board crt OSD on-screen display OSD data slicer
Text: M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP REJ03B0094-0100Z Rev.1.00 May 18, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ/MJA-XXXFP and M306V7FG/FH/FJ/FJAFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged
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M306V7MG/MH/MJ/MJA-XXXFP,
M306V7FG/FH/FJ/FJAFP
REJ03B0094-0100Z
16-BIT
M306V7MG/MH/MJ/MJA-XXXFP
M306V7FG/FH/FJ/FJAFP
M16C/60
100-pin
0C72
THEFT
CSR BC5
BC5 CSR
rc21 series
bc6 csr
block 106416
ccd board
crt OSD on-screen display
OSD data slicer
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diode marking code fj
Abstract: marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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SB491D
OT-23
diode marking code fj
marking 724 diode
SOT23 MARKING code fj
SOT23 code fj
SB491D
marking code TS
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marking 724 diode
Abstract: SOT23 code fj marking code fj sot-23 marking code IR
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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SB491D
OT-23
marking 724 diode
SOT23 code fj
marking code fj
sot-23 marking code IR
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Untitled
Abstract: No abstract text available
Text: J.E.11E.U <3E.mL-L.on.au.ctoi iJ^ioau.cki, One. \-S fj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MUR1650CT Ultrafast Recovery Rectifier FEATURES • Ultrafast Recovery Time • LOW 1-orwara vouage
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MUR1650CT
O-220C
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5410-GO
Abstract: No abstract text available
Text: Lumineszenzdioden Light Emitting Diodes Radiale LED Radial LEDs Type Emissionsfarbe Emission color ^•peak Gehäusefarbe ty p Case color nm m cd 3 mm LED LS LS LS LS 3380-FJ 3 3 8 0 -H 3380-J 3380-HL LY LY LY LY LY 3380-FJ 3380-H 3380-J 3380-K 3380-HL
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3380-FJ
3380-J
3380-HL
3380-H
3380-K
5410-GO
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5380-FJ
Abstract: Q220-1 5469-FH
Text: Lumineszenzdioden Light Emitting Diodes Radiale LED Radiai LEDs Type Emissionsfarbe ^•paah Gehäusefarbe Iv Emission color typ. Case color nm mcd 5 mm LED I1 LS LS LS LS 5380-FJ 5380-H 5380-J 5 3 8 0 -HL LY LY LY LY 5380-FJ 5380-H 5380-J 5380-HL LG LG
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5380-FJ
5380-H
5380-J
5380-HL
Q220-1
5469-FH
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JANTX 1N5811
Abstract: 1N5807 JANTXV MIL-S-19500/477 1N5807 1N5807US 1N5809 1N5809US 1N5811 1N5811US IR 652 P
Text: ^ 1N5807US fj SEMTECH ULTRAFAST RECOVERY Todby ’ b Results — .1 0 morrow s Visio April 20, 2000 1N5809US 1N5811US TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com QUICK REFERENCE DATA SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE
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1N5807US
1N5809US
1N5811US
1N5807
1N5809
1N5811
JANTX 1N5811
1N5807 JANTXV
MIL-S-19500/477
1N5811US
IR 652 P
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1N5802US
Abstract: 1N5802 1N5804 1N5804US 1N5806 1N5806US MIL-STD-701
Text: ^ 1N5802US fj SEMTECH Todb y ’ b Results — .10morrow s Visio April 20, 2000 ULTRAFAST RECOVERY 1N5804US 1N5806US TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com QUICK REFERENCE DATA SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE
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1N5802US
1N5804US
1N5802
1N5804
1N5806
1N5802US
1N5804US
1N5806US
MIL-STD-701
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04180
Abstract: QSound op27p op27
Text: Fj g M, j SEMICONDUCTOR ALPHA AS OP-27 Excellence in Analog Power Products Ultra Low Noise Precision Operational Amplifier FEATURES • Low offset Vos. 10nV Max. • Low drift vs. temperature. 0.2nV/°C
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126dB
OP-27
OP-27
OP-27,
04180
QSound
op27p
op27
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T670-FJ
Abstract: No abstract text available
Text: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Type Emissionsfarbe Emission color typ [nm) Farbe der Uchtaustrittsfläche Color of light I, emitting area [mcd] Multi TOPLED" (Forts.) at q>v [mlm] 1 610/ 565 LYP T670-FJ LYP T670-G LYP T670-H LYP T670-GK
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T670-FJ
T670-G
T670-H
T670-GK
Q62703-Q2677
Q62703-Q2678
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OP298B
Abstract: OP293 OP293A OP293B OP293C OP298 OP298C OP593 OP598 LIL flange
Text: OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series .230 S.84 ‘ .210(5.33)' .225 (5.72) . .03(0.76) (NOTE 13) ml in op!SQ N0M .015 (0.38) ANODE i— 190 (4 .83 ) .178 ( 4 . 62 ) . I _ Fj 1 ^ V
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OP293
OP298
OP593
OP598
OP298B
OP293A
OP293B
OP293C
OP298C
LIL flange
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ERG27-10
Abstract: B2-18 ERG27 ERG77 ERG77-10 T151 T930
Text: ERG27*ERG77 3 oa •1000V *±'*7-^*-K • ■ O utline D raw in g s FAST RECOVERY DIODE • Features • i'a 's ’?-"/'? • Glass passivated chip High voltage • Stud mounted : Applications • Switching power supplies • M 7 fJ —fr'fJU Free-wheel diode
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ERG27
ERG27-10,
ERG77-10
50HziE&
ftl80\
I95t/R89)
ERG27-10
B2-18
ERG77
ERG77-10
T151
T930
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INFRARED DIODES
Abstract: tps 20 TSTA7200
Text: U I - , I TELEFUNKEN ELECTRONIC 17E I> • fl'^OG'ib DD0Ö7D2 b M A L G G T< > T A 7 9 0 0 m ilF W K lI fj electronic u CrMtrve1tchnoiog«$ GaAIAs Infrared Diodes in Hermetically Sealed Cases Applications: Radiation source in near infrared range
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18A2DIN
0Q0fl704
C--04
INFRARED DIODES
tps 20
TSTA7200
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV 310 TOSHIBA DIODE 1 S V 3 10 VCO FOR UHF BAND RADIO • High Capacitance Ratio SILICON EPITAXIAL PLANAR TYPE Unit in mm : C i y / C 4 V = 2.1 Typ. + 0,2 1 .2 5 -0 .1 Low Series Resistance • : rs = 0.28f2 (Typ.) fj \ Useful for Small Size Tuner
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Untitled
Abstract: No abstract text available
Text: PREPARED BY: DATE: SH ARP APPROVED BY: DATE: SPEC. No. ED-99059A SSUE April 16, 1999 ÌÌ ELECTRONIC COMPONENTS GROUP SHARP CORPORATION |> PAGfe ^ t '-’-Y \ 21 Pages if kL -•'* ;/ 1 • ^REPÇESENTA' SPECIFICATION SION OPTO-EDECTRONICDEVK ''C ' / fJ _ >r
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ED-99059A
0104YP
2000pcs.
8000pcs.
GR2W0104YP
GP2W0104YP
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diode zener s4
Abstract: AIR FLOW DETECTOR CIRCUIT DIAGRAM CA1391E
Text: CA1391, CA1394 fJ A R R IS OBSOLETE PRODUCT May 1999 NO RECOMMENDED R^ oQQ 442-7747 Call Central Applications 1-800-442 774 ^ centapp@harr,s.com TV Horizontal Processors Description Features CA1391E - Positive Horizontal Sawtooth Input CA1394E - Negative Horizontal Sawtooth Input
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CA1391,
CA1394
CA1391E
CA1394E
300Hz
diode zener s4
AIR FLOW DETECTOR CIRCUIT DIAGRAM
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Untitled
Abstract: No abstract text available
Text: C fJ H A R R SP720 IS S E M I C O N D U C T O R Electronic Protection Array for ESD and Over-Voltage Protection Aprii 1996 Features Description • ESD Interface Capability for HBM Standards - MIL STD 3015.7 . 15kV
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SP720
SP720
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: [fj ql^ ity S em iconductor , I n c . QuickSwitch Products High-Speed CMC6 Hn D -+ I n I 10-B t Low Power, Low Resistance Bus Switches QS3LR384 advance INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q. bidirectional switches connect inputs
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QS3LR384
24-pin
QS3LR384
MDSL-00308-02
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Untitled
Abstract: No abstract text available
Text: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24*
ERE74
I95t/R89)
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OD-669
Abstract: AT25 diode b33
Text: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for
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OD-669
880nm
OD-669
AT25
diode b33
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ISOWATT221
Abstract: stp3n80xi
Text: £ fj SGS-THOMSON STP3N80XI i!Ll ir^©D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP3N 80XI 4.5 a 800 V 1 .7 A . . . . . • AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE
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STP3N80XI
ISOWATT221
GC3425D
ISOWATT221
stp3n80xi
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSJ9055D,
FSJ9055R
1-800-4-HARRIS
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LP 7510
Abstract: MA801
Text: Light Emitting Diodes Lumineszenzdioden SMT-LEDs11 SMT-LED1> Type E m issionslarbe Emission color \>eak Farbe der Licht nm S A670-HK A670-J A670-K A670-JL LG LG LG LG A670-HK A670-J A670-K A670-JL LP LP LP LP A670-FJ A670-G A670-H A670-GK Color of light
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A670-HK
A670-J
A670-K
A670-JL
A670-FJ
A670-G
LP 7510
MA801
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